AP50G60SW-HF

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▼ High Speed Switching IC ▼ Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A ▼ Built-in Fast Recovery Diode Absolute Maximum Ratings , 1/8" from case for 5 seconds . Notes: 1.Pulse width limited by max. junction temperature . Thermal Data Symbol Rthj-c Rthj-c(Diode) Rthj-a Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Min. Typ. Max. Units IGES -- + 100 nA ICES - - 500 uA - 2.6 3 V - 3.1 3.5 V V GE(th) 2-6 V Qg - 55 100 nC Qge -1 2- nC Qgc -2 7- nC td(on) -2 7- ns tr -2 2- ns td(off) - 110 - ns tf - 100 260 ns Eon - 0.7 - mJ Eoff - 1.2 - mJ Cies - 1250 2000 pF Coes - 235 - pF Cres -7- pF VF - 1.3 1.7 V trr -6 5- ns Qrr - 230 - nC Data and specifications subject to change without notice Maximum Lead Temp. for Soldering Purposes PD@TC=25oC TJ TSTG Operating Junction Temperature Range TL IC@TC=100oC Collector Current 45 A VCE(sat) Collector-Emitter Saturation Voltage 201303274 oC VCE=400V Gate-Collector Charge IC=33A VCE=600V, VGE=0V VGE=15V VCE=VGE, IC=250uA Pulsed Collector Current Output Capacitance f=1.0MHz oC VGE=15V, IC=50A Diode Forward Current 40 Halogen-Free Product A Maximum Power Dissipation Test Conditions Thermal Resistance Junction-Case 300 Thermal Resistance Junction-Ambient ICM 300 Turn-on Delay Time Total Gate Charge Parameter Gate-to-Emitter Leakage Current Gate-Emitter Charge Collector-Emitter Leakage Current Gate Threshold Voltage IF@TC=25oC Units oC/W -55 to 150 150 Storage Temperature Range IF@TC=100oC Diode Forward Current 15 A oC/W oC W oC/W VGE=15V, IC=33A VGE=+30V, VCE=0V Value 0.42 Parameter Thermal Resistance Junction-Case 1.5 VGE IC@TC=25oC Collector Current Gate-Emitter Voltage A V 150 A +30 ▼ RoHS Compliant & Halogen-Free V600 Parameter Input Capacitance VCE=30V Symbol VCES 600V 45A Rating Collector-Emitter Voltage Units FRD Reverse Recovery Time IF=15A FRD Reverse Recovery Charge di/dt = 200 A/ μs FRD Forward Voltage IF=15A Turn-On Switching Loss Turn-Off Switching Loss VCE=390V, Ic=33A, VGE=15V, RG=5Ω, Inductive Load VGE=0V Reverse Transfer Capacitance Rise Time Fall Time Turn-off Delay Time G C E TO-3P C G C E

Fig 1. Typical Output Characteristics Fig 2. Gate Charge Characterisitics Fig 3. Typical Saturation Voltage Fig 4. Typical Collector- Emitter Voltage Characteristics v.s. Junction Temperature Fig 5. Gate Threshold Voltage Fi g 6. Typical Capacitance Characterisitics v.s. Junction Temperature 120 160 200 240 01 0 2 0 3 0 V CE , Collector-Emitter Voltage (V) IC , Collector Current (A) 20V 18V 15V 12V V GE =10V T C =25 o C 0 40 80 120 160 Junction Temperature ( o C) VCE(sat) ,Saturation Voltage(V) I C =5 0A I C =33A V GE =1 5V 0.4 0.8 1.2 1.6 -50 0 50 100 150 Junction Temperature ( o C ) Normalized VGE(th) (V) 100 02468 V CE , Collector-Emitter Voltage (V) IC , Collector Current(A) V GE =15V T C =25 o C 1000 2000 3000 1 5 9 13 17 21 25 29 33 V CE , Collector-Emitter Voltage (V) Capacitance (pF) f=1.0MHz C ies C oes C res T C =150 o C 0 1 02 03 04 05 06 0 Q G , Gate Charge (nC) VGE , Gate -Emitter Voltage (V) I C =33A V CC =250V V CC =300V VCC =400V

Fig 7. Power Dissipation vs. Junction Fig 8. Effective Transient Thermal Temperature Impedance, Junction-to-Case (IGBT) Fig 9. Saturation Voltage vs. VGE Fig 10. Saturation Voltage vs. VGE Fig 11. Forward Characteristic of Fig 12. SOA Characteristics Diode 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) I C =5 0A 33 A 15 A T C =25 o C 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) I C =5 0A 33 A 15 A T C = 150o C 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1000 1 10 100 1000 V CE ,Collector - Emitter Voltage(V) IC ,Collctor Current(A) V GE =15V T C =125 o C Safe Operating Area 0 0.4 0.8 1.2 1.6 2 V F , Forward Voltage (V) IF , Forward Current (A) T j =25 o CT j =150 o C 100 200 300 400 0 50 100 150 200 Junction Temperature ( ℃ ) Power Dissipation (W)