AP4P012LEH A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS -40V ▼ Simple Drive Requirement RDS(ON) 13.5mΩ ▼ Fast Switching Characteristic ID -51A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2.3 ℃/W Rthj-a 62.5 ℃/WMaximum Thermal Resistance, Junction-ambient (PCB mount)3 Thermal Data Parameter 201612281 -55 to 150 Halogen-Free Product Rating -40 Drain Current, VGS @ 10V +20 -51 Pulsed Drain Current1 -200 -32 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V -55 to 150 Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Total Power Dissipation3 2 54.3 G D S AP4P012LE series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The TO-252 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G D S TO-252(H)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -40 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A - - 13.5 m Ω VGS=-4.5V, ID=-20A - - 18 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-5V, ID=-30A - 55 - S IDSS Drain-Source Leakage Current VDS=-32V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=-20A - 32 51.2 nC Qgs Gate-Source Charge V DS=-32V - 10 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 10 - nC td(on) Turn-on Delay Time V DS=-20V - 42 - ns tr Rise Time I D=-30A - 128 - ns td(off) Turn-off Delay Time R G=3.3Ω - 450 - ns tf Fall Time V GS=-10V - 270 - ns Ciss Input Capacitance V GS=0V - 4200 6720 pF Coss Output Capacitance V DS=-25V - 370 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 155 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-30A, VGS=0V - - -1.2 V trr Reverse Recovery Time I S=-30A, VGS=0V, - 18 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 6 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 4.Starting Tj=25oC , VDD=-30V , L=0.1mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 150 200 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =25 o C -10V -7.0V -6.0V -5.0V V G = -4.0V 100 120 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C = 150o C -10V -7.0V -6.0V -5.0V V G = -4.0V 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -20 A T C =25 ℃ 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -30 A V G = - 10V 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = - 250uA -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG -4.5V QGS QGD QG Charge 0.1 100 1000 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms DC T C =25 o C Single Pulse 0 1 02 03 04 05 06 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -20A V DS = -32V 2000 4000 6000 8000 1 1 12 13 14 15 1 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 012345 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o C V DS = -5V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse Operation in this area limited by RDS(ON)

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Resistance 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D = -1mA 100 0 2 04 06 08 0 -I D , Drain Current (A) RDS(ON) (m T j =25 o C -4.5V V GS = -10V 25 50 75 100 125 150 T C , Case Temperature ( o C ) -ID , Drain Current (A)

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