AP4N013H A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 40V ▼ Simple Drive Requirement RDS(ON) 13.5mΩ ▼ Fast Switching Characteristic ID 33A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy3 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4.6 ℃/W Rthj-a 62.5 ℃/W Parameter Total Power Dissipation4 2 Storage Temperature Range Operating Junction Temperature Range -55 to 150 Thermal Data 16.2 Total Power Dissipation 27.1 -55 to 150 Pulsed Drain Current1 Drain Current, VGS @ 10V Drain Current, VGS @ 10V 20.8 Drain-Source Voltage 40 Gate-Source Voltage + 20 AP4N013H Halogen-Free Product 201709081 120 Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Parameter Rating G D S AP4604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial- industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G D S AP4N013 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for high current application due to the low connection resistance. G D S TO-252(H)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 40 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=18A - - 13.5 m Ω VGS=4.5V, ID=12A - - 22 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=5V, ID=18A - 42 - S IDSS Drain-Source Leakage Current VDS=32V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=12A - 16 25.6 nC Qgs Gate-Source Charge V DS=32V - 4 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 6 - nC td(on) Turn-on Delay Time V DS=20V - 7 - ns tr Rise Time I D=18A - 37 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 4- ns tf Fall Time V GS=10V - 5 - ns Ciss Input Capacitance V GS=0V - 1630 2608 pF Coss Output Capacitance V DS=25V - 115 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF Rg Gate Resistance f=1.0MHz - 1.1 2.5 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=18A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=18A, VGS=0V,- 9 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 3 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Starting Tj=25oC , VDD=40V , L=0.1mH , RG=25Ω, VGS=10V 4.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP4N013H

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4N013H 100 120 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10V 7.0V 6.0V 5.0V V G =4.0V 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G =4.0V T C =150 o C 2468 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =12A T C =25 o C 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =18A V G =10V 0.1 100 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j ,Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Switching Time Waveform Temperature 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 800 1600 2400 3200 1 1 12 13 14 15 1 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 1 02 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =12A V DS =32V 0.01 0.1 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) td(on) tr td(off) tf VDS VGS 10% 90%

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation Resistance Fig 15. Transfer Characteristics 100 0 2 04 06 08 0 1 0 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS =10V 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 012345 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C

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