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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Low Gate Charge N-CH BV DSS 40V ▼ Fast Switching Performance RDS(ON) 78mΩ ▼ Surface Mount Package ID 2.9A ▼ RoHS Compliant & Halogen-Free P-CH BV DSS -40V RDS(ON) 205mΩ Description ID -1.9A Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage + 20 + 20 V ID@TA=25℃ 2.9 -1.9 A ID@TA=70℃ 2.3 -1.5 A IDM Pulsed Drain Current1 12 -10 A PD@TA=25℃ Total Power Dissipation 1.136 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 110 ℃/W Data and specifications subject to change without notice 201603251 Parameter Halogen-Free Product Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 SOT-26 AP4C205 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The SOT-26 package is widely used for commercial surface mount applications.

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 40 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=3A - - 78 m Ω VGS=4.5V, ID=2A - - 135 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=1mA 1.2 - 3 V gfs Forward Transconductance V DS=5V, ID=3A - 7 - S IDSS Drain-Source Leakage Current VDS=32V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=2A - 2.5 4 nC Qgs Gate-Source Charge V DS=20V - 0.6 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 1.1 - nC td(on) Turn-on Delay Time V DS=20V - 2 - ns tr Rise Time I D=1A - 19 - ns td(off) Turn-off Delay Time R G=3.3Ω -7- ns tf Fall Time V GS=10V - 22 - ns Ciss Input Capacitance V GS=0V - 140 224 pF Coss Output Capacitance V DS=20V - 37 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 30 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=0.9A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=3A, VGS=0V - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 5 - nC AP4C205Y

Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -40 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-2A - - 205 m Ω VGS=-4.5V, ID=-1A - - 300 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-5V, ID=-2A - 3.5 - S IDSS Drain-Source Leakage Current VDS=-32V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=-1A - 2.5 4 nC Qgs Gate-Source Charge V DS=-20V - 0.8 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 1 - nC td(on) Turn-on Delay Time V DS=-20V - 3 - ns tr Rise Time I D=-1A - 19 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 1- ns tf Fall Time V GS=-10V - 19 - ns Ciss Input Capacitance V GS=0V - 210 336 pF Coss Output Capacitance V DS=-20V - 37 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 27 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-0.9A, VGS=0V - - -1.2 V trr Reverse Recovery Time I S=-2A, VGS=0V - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 6.3 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

3.3A Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3.3 2.68 13.2 1.136 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 8.0V 7.0V 6.0V 5.0V V G = 4.0V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 8.0V 7.0V 6.0V 5.0V V G = 4.0V 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =3A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 012345 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =2A V DS =2 0V 100 200 300 400 1 1 12 13 14 15 1 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) 100us 1ms 10ms 100ms DC T A =25 o C Single Pulse 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.02 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 180℃/W t T 0.01 td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)

Fig 13. Drain Current v.s. Ambient Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Fig 16. Transfer Characteristics Resistance 0.4 0.8 1.2 1.6 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 100 200 300 400 0 4 8 12 16 20 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS = 10V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A) 012345 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -10V -8.0V -7.0V -6.0V -5.0V V G = -4.0V 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =- 2A V G = -10 V 0.0 1.0 2.0 3.0 4.0 5.0 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =2 5o C -10V -8.0V -7.0V -6.0V -5.0V V G = - 4.0 V 160 180 200 220 240 260 280 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =-1A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = -250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0123456 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -1A V DS = -20V 100 200 300 400 1 1 12 13 14 15 1 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms 100ms DC T A =25 o C Single Pulse Q VG -4.5V QGS QGD QG Charge 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 180℃/W t T 0.02 td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)

Fig 13. Drain Current v.s. Ambient Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Fig 16. Transfer Characteristics Resistance 0.4 0.8 1.2 1.6 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 200 400 600 800 1000 02468 1 0 1 2 -I D , Drain Current (A) RDS(ON) (m T j =25 o C V GS = -4.5V V GS = -10V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) -ID , Drain Current (A) 0123456 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o C V DS = -5V

Part Number : Z04 Z04SS Date Code : SS SS

Product Information

AP4C205Y specifications and overview.

Summary

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Source title AP4C205Y Datasheet(PDF) - Advanced Power Electronics Corp.

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