AP4957AGM A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-Resistance BVDSS -30V ▼ Simple Drive Requirement RDS(ON) 26mΩ ▼ Dual P MOSFET Package ID -7.4A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice 200712191 Thermal Data Parameter Total Power Dissipation 2 -55 to 150 Operating Junction Temperature Range -55 to 150 Storage Temperature Range Continuous Drain Current3 -5.9 Pulsed Drain Current1 -30 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current AP4957AGM Rating RoHS-compliant Product -30 ±20 -7.4 SO-8 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-7A - - 26 mΩ VGS=-4.5V, ID=-5A - - 36 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-7A - 7 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge2 ID=-7A - 16 26 nC Qgs Gate-Source Charge V DS=-24V - 2.8 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 9.3 - nC td(on) Turn-on Delay Time2 VDS=-15V - 9 - ns tr Rise Time I D=-1A - 6.5 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 40 - ns tf Fall Time R D=15Ω -2 6- ns Ciss Input Capacitance V GS=0V - 1215 1950 pF Coss Output Capacitance V DS=-25V - 190 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 185 - pF Rg Gate Resistance f=1.0MHz - 5.3 8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.7A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-7A, VGS=0V, - 22 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. DEVICE OR SYSTEM ARE NOT AUTHORIZED. AP4957AGM THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4957AGM 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =2 5o C -10V -7.0V -5.0V -4.5V V G =-3.0V 01234567 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -10V -7.0V -5.0V -4.5V V G =-3.0V 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =-5A T A =25 ℃ 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =-7A V G =-10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP4957AGM Q VG -4.5V QGS QGD QG Charge 0 5 10 15 20 25 30 35 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = - 7 A V DS = - 24 V 100 1000 10000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 012345 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o CV DS =-5V

Package Outline : SO-8 Millimeters SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E1 3.80 3.90 4.00 E 5.80 6.15 6.50 L 0.38 0.71 1.27 θ 0 4.00 8.00 e 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8

1.27 TYP

ADVANCED POWER ELECTRONICS CORP. c DETAIL A A 4957AGM YWWSSS Package CodePart Number DETAIL A L θ Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence e B 5678 D E1 E meet Rohs requirement