AP4955M

AP4955M A-POWER | Alldatasheet

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Technical content

P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -20V ▼ Low Gate Charge RDS(ON) 45mΩ ▼ Fast Switching Characteristic ID -5.6A

Description

V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG TJ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient3 Max. 62.5 ℃/W Data and specifications subject to change without notice 200303041 AP4955M Rating -20 ±20 -5.6 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 -4.5 Pulsed Drain Current1 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.016 Storage Temperature Range Thermal Data Parameter Total Power Dissipation TThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. S1 G1

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA -0.01 V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-5A mΩ VGS=-2.5V, ID=-4A mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 -1.2 V gfs Forward Transconductance VDS=-5V, ID=-5A S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-20V, VGS=0V uA Drain-Source Leakage Current (Tj=70oC) VDS=-16V, VGS=0V -25 uA IGSS Gate-Source Leakage VGS=±20V nA Qg Total Gate Charge2 ID=-5A nC Qgs Gate-Source Charge VDS=-16V nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V nC td(on) Turn-on Delay Time2 VDS=-10V ns tr Rise Time ID=-1A ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V ns tf Fall Time RD=10Ω ns Ciss Input Capacitance VGS=0V 1400 2240 pF Coss Output Capacitance VDS=-20V 270 pF Crss Reverse Transfer Capacitance f=1.0MHz 230 pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.6A, VGS=0V -1.2 V trr Reverse Recovery Time2 IS=-5A, VGS=0V, ns Qrr Reverse Recovery Charge dI/dt=100A/µs nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on min. copper pad. AP4955M ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.0 0.5 1.0 1.5 2.0 -50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V) 0.6 0.8 1.0 1.2 1.4 1.6 -50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =-5A V G =-10V -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 25 o C -5.0V -4.5V -3.0V -2.5V V G =- 2.0 V -V GS , Gate-to-Source Voltage (V) RDS(ON) (mΩ Ω Ω I D = -4 A T A =25 o C -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150 o C -5.0V -4.5V -3.0V -2.5V V G =- 2.0 V 0.2 0.4 0.6 0.8 1.2 1.4 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o C T j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP4955M td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0.01 0.1 100 0.1 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 100 1000 10000 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-5A V DS =-16V 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse