AP4951GM A-POWER | Alldatasheet

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Technical content

Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -60V ▼ Low Gate Charge RDS(ON) 96mΩ ▼ Fast Switching Performance ID -3.4A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice RoHS-compliant Product Thermal Data Parameter Total Power Dissipation 2 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.016 Storage Temperature Range Continuous Drain Current3 -2.7 Pulsed Drain Current1 -20 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 201108073-1/4 AP4951GM Rating -60 ±20 -3.4 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SO-8

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -60 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.04 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-3.4A - - 96 mΩ VGS=-4.5V, ID=-2.7A - - 120 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-3.4A - 3.4 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-60V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-48V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge2 ID=-3A - 29.5 - nC Qgs Gate-Source Charge V DS=-48V - 3 - nC Qgd Gate-Drain ("Miller") Charge V GS=-10V - 7 - nC td(on) Turn-on Delay Time2 VDS=-30V - 11 20 ns tr Rise Time I D=-1A - 5 10 ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 39 80 ns tf Fall Time R D=30Ω - 10.5 20 ns Ciss Input Capacitance V GS=0V - 1320 - pF Coss Output Capacitance V DS=-25V - 125 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-2.1A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-3A, VGS=0V, - 39 80 ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 64 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. DEVICE OR SYSTEM ARE NOT AUTHORIZED. AP4951GM THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -7.0V -5.0V -4.5V V G =-3.0V 02468 1 0 1 2 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C -10V -7.0V -5.0V -4.5V V G =- 3 .0V 100 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -2.7A T A =25 ℃ 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -3.4A V G = -10V 0.00 2.00 4.00 6.00 8.00 10.00 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.6 0.8 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP4951GM 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 1 02 03 04 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -3A V DS = -48V 100 1000 10000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG -10V QGS QGD QG Charge 0246 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o C V DS = -5V

Package Outline : SO-8 Millimeters SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E1 3.80 3.90 4.00 E 5.80 6.15 6.50 L 0.38 0.71 1.27 θ 0 4.00 8.00 e 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8

1.27 TYP

ADVANCED POWER ELECTRONICS CORP. c DETAIL A A 4951GM YWWSSS Package CodePart Number DETAIL A L θ Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence e B 5678 D E1 E meet Rohs requirement