AP4920GM

AP4920GM A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement BVDSS 25V ▼ ▼ ▼ ▼ Low On-resistance RDS(ON) 25mΩ ▼ ▼ ▼ ▼ Fast Switching ID 7A

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TA=25℃ Continuous Drain Current3 A ID@TA=70℃ Continuous Drain Current3 A IDM Pulsed Drain Current1 A PD@TA=25℃ Total Power Dissipation W Linear Derating Factor W/ ℃ TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Symbol Value Unit Rthj-amb Thermal Resistance Junction-ambient 3 Max. 62.5 ℃/W Data and specifications subject to change without notice Parameter 200305021 AP4920GM Thermal Data Rating Pb Free Plating Product -55 to 150 5.7 0.016 -55 to 150 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. The SO-8 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SO-8 ± 20

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 25 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 -V / ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=7A - - 25 mΩ VGS=4.5V, ID=5.2A - - 35 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=7A - 14 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=25V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=20V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±20V - - nA Qg Total Gate Charge2 ID=7A - 10.5 - nC Qgs Gate-Source Charge V DS=15V - 1.9 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 7.5 - nC td(on) Turn-on Delay Time2 VDS=15V - 8 - ns tr Rise Time I D=1A - 9.5 - ns td(off) Turn-off Delay Time R G=6Ω,VGS=10V - 25 - ns tf Fall Time R D=15Ω - 13.5 - ns Ciss Input Capacitance V GS=0V - 395 - pF Coss Output Capacitance V DS=25V - 260 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 105 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V - - 1.67 A VSD Forward On Voltage2 Tj=25℃, IS=2.1A, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad. AP4920GM ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 01234567 VDS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 oC 10V 8.0V 6.0V 5.0V V GS = 4 .0V 3456789 1 0 1 1 V GS (V) RDS(ON) (m ΩΩΩΩ) I D =7A T C =25 ℃℃℃℃ 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( oC) Normalized RDS(ON) I D =7A V GS =10V 01234567 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 oC 10V 8.0V 6.0V 5.0V V GS = 4 .0V

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP4920GM 25 50 75 100 125 150 T c , Case Temperature ( oC) ID , Drain Current (A) 0 50 100 150 T c ,Case Temperature ( oC) PD (W) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 V DS (V) ID (A) T C =25 oC Single Pulse 1ms 10ms 100ms 10s DC

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 0 2 4 6 8 1 01 21 41 61 82 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =7A V DS =15V 0.01 0.10 1.00 10.00 100.00 V SD (V) IS(A) T j =25 oCT j =150 oC 0.5 1.5 2.5 -50 0 50 100 150 T j ,Junction Temperature ( oC) VGS(th) (V)

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 0.6x RATED VDS TO THE OSCILLOSCOPE 10V D G S VDS VGS RG RD 0.6 x RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS I D I G 1~ 3 mA