AP4813GSM-HF A-POWER | Alldatasheet

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Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE ▼ Simple Drive Requirement BVDSS 30V ▼ Good Recovery Time RDS(ON) 9mΩ ▼ Fast Switching Performance ID 13A ▼ RoHS Compliant & Halogen-Free

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A VKA V IF@TA=25℃ A IFM A W W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a 50 ℃/W Rthj-a 60 ℃/W Data and specifications subject to change without notice 200910301 Halogen-Free Product Parameter 10.6 Pulsed Drain Current1 50 Maximum Thermal Resistance, Junction-ambient3(MOSFET) Schottky Reverse Voltage Continous Forward Current +20 Maximum Thermal Resistance, Junction-ambient3(Schottky) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current3 AP4813GSM-HF Rating PD@TA=25℃ Pulsed Diode Forward Current 25 -55 to 150 Operating Junction Temperature Range -55 to 150 Max Power Dissipation (Schottky) 2.0 Storage Temperature Range Parameter Max Power Dissipation (MOSFET) 2.5 Thermal Data Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S S S G D D D D SO-8 G D S Schottky Diode

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=12A - - 9 m Ω VGS=4.5V, ID=8A - - 15 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=8A - 20 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 100 uA Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 1 mA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=8A - 11.5 18 nC Qgs Gate-Source Charge V DS=15V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 7 - nC td(on) Turn-on Delay Time2 VDS=15V - 9 - ns tr Rise Time I D=1A - 7 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 23 - ns tf Fall Time R D=15Ω -8- ns Ciss Input Capacitance V GS=0V - 730 1170 pF Coss Output Capacitance V DS=25V - 205 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 150 - pF Rg Gate Resistance f=1.0MHz - 1.5 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Diode+Schottky Forward On Voltage2 IS=1.0A, VGS=0V - 0.48 0.5 V trr Body Diode+Schottky Reverse Recovery Time IS=8A, VGS=0V, - 20 - ns Qrr Body Diode+Schottky Reverse Recovery Charge dI/dt=100A/µs - 9 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10 sec. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP4813GSM-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G =4.0V 0123 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G = 4.0V T A = 150o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =8A T A =25 ℃ 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =1 2A V G =10V 0.50 0.75 1.00 1.25 1.50 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C MOSFET+Schottky

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 400 800 1200 1600 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 4 8 12 16 20 24 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =1 5V V DS =1 8V V DS =2 4V I D =8A 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 125℃/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) 100us 1ms 10ms 100ms DCT A =25 o C Single Pulse td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)