AP4810GSM

AP4810GSM A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE ▼ Simple Drive Requirement BVDSS 30V ▼ Good Recovery Time RDS(ON) 13.5mΩ ▼ Fast Switching Performance ID 11A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A VKA V IF@TA=25℃ A IFM A PD@TA=25℃ W W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a 50 ℃/W Rthj-a 60 ℃/W Data and specifications subject to change without notice 200910296 RoHS-compliant Product +20 Maximum Thermal Resistance, Junction-ambient3(Schottky) Parameter AP4810GSM Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current3 9.3 Pulsed Drain Current1 50 Maximum Thermal Resistance, Junction-ambient3(MOSFET) Schottky Reverse Voltage 30 Continous Forward Current 1 Thermal Data Pulsed Diode Forward Current 25 -55 to 150 Operating Junction Temperature Range -55 to 150 Max Power Dissipation (Schottky) 2.0 Storage Temperature Range Parameter Max Power Dissipation (MOSFET) 2.5 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S S S G D D D D SO-8 G D S Schottky Diode

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=10A - - 13.5 m Ω VGS=4.5V, ID=5A - - 20 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=11A - 18 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 100 uA Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 1 mA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=10A - 14 22.5 nC Qgs Gate-Source Charge V DS=15V - 3.2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 8.4 - nC td(on) Turn-on Delay Time2 VDS=15V - 9 - ns tr Rise Time I D=1A - 6 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 27 - ns tf Fall Time R D=15Ω -8- ns Ciss Input Capacitance V GS=0V - 1010 1200 pF Coss Output Capacitance V DS=25V - 200 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 170 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Diode+Schottky Forward On Voltage2 IS=1.0A, VGS=0V - 0.48 0.5 V IS 5A trr Body Diode+Schottky Reverse Recovery Time IS=10A, VGS=0V, - 21 - ns Qrr Body Diode+Schottky Reverse Recovery Charge dI/dt=100A/µs - 13 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10 sec. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. Max Body-Diode+Schottky Continous Current AP4810GSM

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4810GSM 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7 .0V 5.0V 4.5V V G =3.0V 0123 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V V G =3.0V T A = 150o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =5A T A =25 ℃ 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =1 0A V G =10V 0.50 0.75 1.00 1.25 1.50 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 0.001 0.01 0.1 0 0.2 0.4 0.6 0.8 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =125 o C MOSFET+Schottky

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 1 02 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =1 5V V DS =2 0V V DS =2 5V I D =1 0A 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 125℃/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) 100us 1ms 10ms 100ms DCT A =25 o C Single Pulse 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V