AP4610P

AP4610P A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 40V ▼ Ultra-low On-resistance RDS(ON) 2.5mΩ ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.2 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice Parameter Total Power Dissipation 2.4 Storage Temperature Range Operating Junction Temperature Range -55 to 175 Thermal Data 320 Total Power Dissipation 125 -55 to 175 Gate-Source Voltage + 20 Pulsed Drain Current1 Drain Current, VGS @ 10V Drain Current, VGS @ 10V3(Silicon Limited) Drain Current, VGS @ 10V3 120 Parameter Rating Drain-Source Voltage 40 AP4610P Halogen-Free Product 201611081 400 110 160 G D S G D S TO-220(P) AP4604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial- industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G D S G D S TO-220(P) AP4610 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial- industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 40 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=40A - - 2.5 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=5V, ID=40A - 130 - S IDSS Drain-Source Leakage Current VDS=32V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=40A - 110 176 nC Qgs Gate-Source Charge V DS=32V - 28 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 39 - nC td(on) Turn-on Delay Time V DS=20V - 22 - ns tr Rise Time I D=40A - 70 - ns td(off) Turn-off Delay Time R G=3.3Ω -5 0- ns tf Fall Time V GS=10V - 45 - ns Ciss Input Capacitance V GS=0V - 5350 8560 pF Coss Output Capacitance V DS=25V - 1100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 340 - pF Rg Gate Resistance f=1.0MHz - 1.3 2.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=40A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=40A, VGS=0V - 35 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 30 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 120A. 4.Starting T j=25oC , VDD=30V , L=0.1mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP4610P

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4610P 100 200 300 400 02468 1 0 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10V 8.0V 7.0V 6.0V V G =6.0V 120 160 200 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 8.0V 7.0V V G =6.0V T C = 175o C 456789 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =40A T C =25 o C 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -100 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =40A V G =10V 100 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =175 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 200 T j ,Junction Temperature ( o C) Normalized VGS(th) I D =1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 1000 2000 3000 4000 5000 6000 7000 1 1 12 13 14 15 1 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 40 80 120 160 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =4 0A V DS =32V 0.1 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 120 160 200 25 75 125 175 T C , Case Temperature ( o C ) ID , Drain Current (A) Limited by package 120 160 200 02468 1 0 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =175 o C T j =25 o C V DS =5V T j = -55 o C

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Fig 15. Typ. Drain-Source on State Resistance 0 20 40 60 80 100 120 I D , Drain Current (A) RDS(ON) (m T j =25 o C V GS =10V 120 160 200 0 50 100 150 200 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA

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