AP4543GEM-HF

AP4543GEM-HF_14 A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BV DSS 40V ▼ Lower Gate Charge RDS(ON) 25mΩ ▼ Fast Switching Performance ID 7A ▼ RoHS Compliant & Halogen-Free P-CH BV DSS -40V RDS(ON) 42mΩ Description ID -5.5A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage + 20 + 20 V ID@TA=25℃ Continuous Drain Current3 7.0 -5.5 A ID@TA=70℃ Continuous Drain Current3 5.5 -4.4 A IDM Pulsed Drain Current1 30 -30 A PD@TA=25℃ Total Power Dissipation 2.0 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice 200909011 Parameter Thermal Data Halogen-Free Product SO-8 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,low on-resistance and cost- effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 40 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=7A - - 25 m Ω VGS=4.5V, ID=5A - - 38 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=7A - 14 - S IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 30 uA Qg Total Gate Charge2 ID=7A - 7.5 12 nC Qgs Gate-Source Charge V DS=20V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 3.7 - nC td(on) Turn-on Delay Time2 VDS=20V - 6 - ns tr Rise Time I D=1A - 6.5 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 19 - ns tf Fall Time R D=20Ω - 6.5 - ns Ciss Input Capacitance V GS=0V - 605 970 pF Coss Output Capacitance V DS=25V - 115 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Rg Gate Resistance f=1.0MHz - 2.1 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=7A, VGS=0V - 21 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC AP4543GEM-HF

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -40 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A - - 42 m Ω VGS=-4.5V, ID=-3A - - 65 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-5A - 10 - S IDSS Drain-Source Leakage Current VDS=-40V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 30 uA Qg Total Gate Charge2 ID=-5A - 11.5 18.5 nC Qgs Gate-Source Charge V DS=-20V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 7 - nC td(on) Turn-on Delay Time2 VDS=-20V - 10 - ns tr Rise Time I D=-1A - 8 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 25 - ns tf Fall Time R D=20Ω -3 0- ns Ciss Input Capacitance V GS=0V - 690 1100 pF Coss Output Capacitance V DS=-25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 135 - pF Rg Gate Resistance f=1.0MHz - 6 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.7A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-5A, VGS=0V - 29 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 24 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =2 5o C 10V 7.0V 6.0V 5.0V V G = 4.0 V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 6.0V 5.0V V G = 4.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =5A T A =25 o C 0.4 0.8 1.2 1.6 2.0 -50 -25 0 25 50 75 100 125 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =7A V G =10V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 048 1 2 1 6 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =7A V DS =20V 200 400 600 800 1000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =2 5o C -10V -7.0V -6.0V -5.0V V G = - 4.0V 2468 1 0 -V GS ,Gate-to-Source Voltage (V) RDS(ON) (m I D =- 3A T A =25 o C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -10V -7.0V -6.0V -5.0V V G = - 4.0V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -5A V G = -10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0 4 8 1 21 62 02 4 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =- 5A V DS = -20 V 200 400 600 800 1000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC Q VG -4.5V QGS QGD QG Charge 0.01 0.1 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse td(on) tr td(off)tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)