AP4539GM-HF

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BV DSS 20V ▼ Lower Gate Charge RDS(ON) 11.5mΩ ▼ Fast Switching Performance ID 10.4A ▼ RoHS Compliant & Halogen-Free P-CH BV DSS -20V RDS(ON) 23mΩ Description ID -7.5A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 20 -20 V VGS Gate-Source Voltage + 16 + 12 V ID@TA=25℃ Continuous Drain Current3 10.4 -7.5 A ID@TA=70℃ Continuous Drain Current3 8.3 -6 A IDM Pulsed Drain Current1 30 -30 A PD@TA=25℃ Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice 201209121 Parameter Thermal Data Halogen-Free Product AP4539 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. S1 G1 SO-8

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=9A - 9.1 11.5 m Ω VGS=4.5V, ID=5A - 10.2 13.5 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.3 0.75 1.2 V gfs Forward Transconductance V DS=10V, ID=9A - 33 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+16V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=9A - 16 25.6 nC Qgs Gate-Source Charge V DS=10V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 5.5 - nC td(on) Turn-on Delay Time V DS=10V - 6 - ns tr Rise Time I D=1A - 20 - ns td(off) Turn-off Delay Time R G=3.3Ω -3 1- ns tf Fall Time V GS=10V - 19 - ns Ciss Input Capacitance V GS=0V - 1350 2160 pF Coss Output Capacitance V DS=10V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF Rg Gate Resistance f=1.0MHz - 2.3 4.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=9A, VGS=0V, - 22 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC AP4539GM-HF

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-7A - 18.3 23 m Ω VGS=-2.5V, ID=-4A - 22.9 30 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.3 -0.6 -1.2 V gfs Forward Transconductance V DS=-10V, ID=-7A - 30 - S IDSS Drain-Source Leakage Current VDS=-16V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=+12V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=-7A - 28 44.8 nC Qgs Gate-Source Charge V DS=-10V - 3 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 9 - nC td(on) Turn-on Delay Time V DS=-10V - 9 - ns tr Rise Time I D=-1A - 26 - ns td(off) Turn-off Delay Time R G=3.3Ω - 100 - ns tf Fall Time V GS=-5V - 56 - ns Ciss Input Capacitance V GS=0V - 2450 3920 pF Coss Output Capacitance V DS=-10V - 320 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 300 - pF Rg Gate Resistance f=1.0MHz - 4 8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.7A, VGS=0V - - -1.2 V trr Reverse Recovery Time I S=-7A, VGS=0V, - 45 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 31 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 6.0V 5.0V V G =4.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON0 (m I D = 5A T A = 25 o C 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =9A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 30 -30 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 0 1 02 03 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =9A V DS =1 0V 400 800 1200 1600 2000 1 5 9 1 31 72 12 5 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse Operation in this area limited by RDS(ON) 01234 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j =-40 o C 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -5.0V -4.5V -3.5V -2.5V V G = - 2.0V 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -5.0V -4.5V -3.5V -2.5V V G = - 2.0V 02468 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -4 A T A =25 o C 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -7 A V G = -4.5V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) I D = -250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 30 -30 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 0 1 02 03 04 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -7A V DS = -10V 800 1600 2400 3200 1 5 9 13 17 21 25 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.0 0.1 0.2 Duty factor=0.5 Single Pulse Operation in this area limited by RDS(ON) 01234 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o C T j =25 o C V DS = -5V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) -ID , Drain Current (A) T j = -40 o C