AP4525GEH-HF

AP4525GEH-HF_16 A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼▼ ▼▼ Simple Drive Requirement N-CH BV DSS 40V ▼▼ ▼▼ Good Thermal Performance R DS(ON) 28m Ω ▼▼ ▼▼ Fast Switching Performance ID 15A ▼▼ ▼▼ RoHS Compliant & Halogen-Free P-CH BV DSS -40V R DS(ON) 42m Ω Description ID -12A Absolute Maximum Ratings@T j=25 oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage ±16 ±16 V ID @T C =25 ℃ Drain Current 15.0 -12.0 A ID @T C =70 ℃ Drain Current 12.0 -10.0 A IDM Pulsed Drain Current 1 50 -50 A PD @T C =25 ℃ Total Power Dissipation 10.4 W Linear Derating Factor 0.083 W/ ℃ T STG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 12 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 1 10 ℃/W Data and specifications subject to change without notice 201501166 Parameter Thermal Data AP4525GEH-HF Halogen-Free Product TO-252-4L G1 S2 D1/D2 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness.

Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage VGS =0V, I D =250uA 40 - - V ΔBV DSS /ΔTj Breakdown Voltage Temperature Coefficient Reference to 25 ℃, I D =1mA - 0.03 - V/ ℃ R DS(ON) Static Drain-Source On-Resistance 2 VGS =10V, I D =6A - - 28 m Ω VGS =4.5V, I D =4A - - 32 m Ω VGS(th) Gate Threshold Voltage V DS =V GS , I D =250uA 1 - 3 V gfs Forward Transconductance V DS =10V, I D =6A - 6 - S IDSS Drain-Source Leakage Current VDS =40V, V GS =0V - - 1 uA Drain-Source Leakage Current (T j=70 oC) VDS =32V, V GS =0V - - 25 uA IGSS Gate-Source Leakage V GS =±16V - - ±30 uA Q g Total Gate Charge I D =6A - 9 14 nC Q gs Gate-Source Charge V DS =20V - 1.5 - nC Q gd Gate-Drain ("Miller") Charge V GS =4.5V - 4 - nC td(on) Turn-on Delay Time V DS =20V - 7 - ns tr Rise Time I D =6A - 20 - ns td(off) Turn-off Delay Time R G =3 Ω,V GS =10V - 20 - ns tf Fall Time R D =3.3 Ω - 4 - ns C iss Input Capacitance V GS =0V - 580 930 pF C oss Output Capacitance V DS =25V - 100 - pF C rss Reverse Transfer Capacitance f=1.0MHz - 70 - pF R g Gate Resistance f=1.0MHz - 2 3 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=15A, V GS =0V - - 1.8 V trr Reverse Recovery Time I S=6A, V GS =0V - 20 - ns Q rr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC AP4525GEH-HF

Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage VGS =0V, I D =-250uA -40 - - V ΔBV DSS /ΔTj Breakdown Voltage Temperature Coefficient Reference to 25 ℃,I D =-1mA - -0.03 - V/ ℃ R DS(ON) Static Drain-Source On-Resistance 2 VGS =-10V, I D =-5A - - 42 m Ω VGS =-4.5V, I D =-3A - - 60 m Ω VGS(th) Gate Threshold Voltage V DS =V GS , I D =-250uA -0.8 - -2.5 V gfs Forward Transconductance V DS =-10V, I D =-5A - 5 - S IDSS Drain-Source Leakage Current VDS =-40V, V GS =0V - - -1 uA Drain-Source Leakage Current (T j=70 oC) VDS =-32V, V GS =0V - - -25 uA IGSS Gate-Source Leakage V GS =±16V - - ±30 uA Q g Total Gate Charge I D =-5A - 9 24 nC Q gs Gate-Source Charge V DS =-20V - 2 - nC Q gd Gate-Drain ("Miller") Charge V GS =-4.5V - 5 - nC td(on) Turn-on Delay Time V DS =-20V - 8.5 - ns tr Rise Time I D =-5A - 15 - ns td(off) Turn-off Delay Time R G =3 Ω,V GS =-10V - 27 - ns tf Fall Time R D =4 Ω - 25 - ns C iss Input Capacitance V GS =0V - 770 1230 pF C oss Output Capacitance V DS =-20V - 165 - pF C rss Reverse Transfer Capacitance f=1.0MHz - 115 - pF R g Gate Resistance f=1.0MHz - 6 9 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=-12A, V GS =0V - - -1.8 V trr Reverse Recovery Time I S=-5A, V GS =0V - 20 - ns Q rr Reverse Recovery Charge dI/dt=-100A/µs - 16 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width < 300us , duty cycle <2%. 3.N-CH , P-CH are same . THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARG E, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED . APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF T HE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DES CRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER IT S PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FUR THER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP4525GEH-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Thresho ld Voltage v.s. Reverse Diode Junction Temperature 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 25 o C 10V 7.0V 5.0V 4.5V V G =3.0V V SD , Source-to-Drain Voltage (V) IS(A) T j=25 o CT j=150 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized V GS(th) 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150 o C 10V 7.0V 5.0V 4.5V V G =3.0V 100 120 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) R DS(ON) (m ΩΩΩΩ) ID = 4 A T A =25 o C 0.8 1.2 1.6 25 50 75 100 125 150 T j , Junction Temperature ( o C) Normalized R DS(ON) ID = 6 A V G =10V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q V G 4.5V Q GS Q GD Q G Charge 0 5 10 15 20 Q G , Total Gate Charge (nC) V GS , Gate to Source Voltage (V) ID =6A V DS =20V 100 1000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j=150 o CT j=25 o C V DS =5V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc ) PDM Duty factor = t/T Peak T j = P DM x R thjc + T C t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Fig 1. Typical Output Characteristics F ig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Thresho ld Voltage v.s. Reverse Diode Junction Temperature 0 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) -I D , Drain Current (A) T A = 25 o C -10V -7.0V -5.0V -4.5V V G = - 3.0V 110 140 170 200 2 4 6 8 10 -V GS ,Gate-to-Source Voltage (V) R DS(ON) (m ΩΩΩΩ) ID = -3 A T A =25 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized V GS(th) 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -I D , Drain Current (A) T A = 150 o C -10V -7.0V -5.0V -4.5V V G = - 3.0V 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 150 T j , Junction Temperature ( o C) Normalized R DS(ON) ID = -5A V G = -10V -V SD , Source-to-Drain Voltage (V) -I S(A) T j=25 o CT j=150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 0 4 8 12 16 20 Q G , Total Gate Charge (nC) -V GS , Gate to Source Voltage (V) ID = -5 A V DS = - 2 0 V 100 1000 10000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -I D (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) -I D , Drain Current (A) T j=150 o CT j=25 o C V DS =-5V Q V G -4.5V Q GS Q GD Q G Charge 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc ) PDM Duty factor = t/T Peak T j = P DM x R thjc + T C t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence 4525GEH YWWSSS meet Rohs requirement for low voltage MOSFET only