AP4525GEH-A

AP4525GEH-A A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BV DSS 40V ▼ Good Thermal Performance RDS(ON) 26mΩ ▼ Fast Switching Performance ID 8.3A P-CH BV DSS -40V RDS(ON) 40mΩ Description ID -7A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage ±16 ±16 V ID@TA=25℃ Continuous Drain Current3 8.3 -7.0 A ID@TA=70℃ Continuous Drain Current3 6.6 -5.6 A IDM Pulsed Drain Current1 50 -50 A PD@TA=25℃ Total Power Dissipation W Linear Derating Factor W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 8 ℃/W Rthj-a Thermal Resistance Junction-ambient 3 Max. 40 ℃/W Data and specifications subject to change without notice Parameter 200627071-1/7 Thermal Data AP4525GEH-A RoHS-compliant Product 3.125 0.025 TO-252-4L G1 S2G2 D1/D2 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 40 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=6A - - 26 mΩ VGS=4.5V, ID=4A - - 32 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=6A - 6 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=40V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±16V - - ±30 uA Qg Total Gate Charge2 ID=6A - 9 14 nC Qgs Gate-Source Charge V DS=20V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 4 - nC td(on) Turn-on Delay Time2 VDS=20V - 7 - ns tr Rise Time I D=6A - 20 - ns td(off) Turn-off Delay Time R G=3Ω,VGS=10V - 20 - ns tf Fall Time R D=3.3Ω -4- ns Ciss Input Capacitance V GS=0V - 580 930 pF Coss Output Capacitance V DS=25V - 100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 2 3 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=15A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=6A, VGS=0V - 20 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC AP4525GEH-A

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -40 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA - -0.03 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A - - 40 mΩ VGS=-4.5V, ID=-3A - - 60 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.8 - -2.5 V gfs Forward Transconductance V DS=-10V, ID=-5A - 5 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-40V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-32V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=±16V - - ±30 uA Qg Total Gate Charge2 ID=-5A - 9 24 nC Qgs Gate-Source Charge V DS=-20V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 5 - nC td(on) Turn-on Delay Time2 VDS=-20V - 8.5 - ns tr Rise Time I D=-5A - 15 - ns td(off) Turn-off Delay Time R G=3Ω,VGS=-10V - 27 - ns tf Fall Time R D=4Ω -2 5- ns Ciss Input Capacitance V GS=0V - 760 1220 pF Coss Output Capacitance V DS=-25V - 150 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 105 - pF Rg Gate Resistance f=1.0MHz - 6 9 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-12A, VGS=0V - - -1.3 V trr Reverse Recovery Time2 IS=-5A, VGS=0V - 20 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 16 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test. 3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. DEVICE OR SYSTEM ARE NOT AUTHORIZED. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT AP4525GEH-A

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4525GEH-A 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10V 7.0V 5.0V 4.5V V G =3.0V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150o C 10V 7.0V 5.0V 4.5V V G =3.0V 100 120 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =4A T C =25 o C 0.6 1.0 1.4 1.8 25 50 75 100 125 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =6A V G =10V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP4525GEH-A Q VG 4.5V QGS QGD QG Charge 0 5 10 15 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =6A V DS =20V 100 1000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 10s 02468 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + TA Rthja=75℃/W t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4525GEH-A 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =2 5o C -10V -7.0V -5.0V -4.5V V G = - 3.0V 110 140 170 200 2468 1 0 -V GS ,Gate-to-Source Voltage (V) RDS(ON) (m I D = -3 A T C =25 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C = 150o C -10V -7.0V -5.0V -4.5V V G = - 3.0V 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -5A V G = -10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP4525GEH-A 048 1 2 1 6 2 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =- 5A V DS =-20V 100 1000 10000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 10s 02468 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o C V DS =-5V Q VG -4.5V QGS QGD QG Charge 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + TA Rthja=75℃/W t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

Package Outline : TO-252(4L) Millimeters MIN NOM MAX A 6.40 6.6 6.80 B 5.2 5.35 5.50 C 9.40 9.80 10.20 D 2.40 2.70 3.00 P S 0.50 0.65 0.80 E3 E3 3.50 4.00 4.50 R 0.80 1.00 1.20 G 0.40 0.50 0.60 H 2.20 2.30 2.40 J 0.45 0.50 0.55 K 0.00 0.075 0.15 L 0.90 1.20 1.50 M 5.40 5.60 5.80 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-252(4L) SYMBOLS 1.27 REF. ADVANCED POWER ELECTRONICS CORP. A B C M D H J K L Part Number Package Code XXXXGEH YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence LOGO GS P R meet Rohs requirement