AP4521GEH

AP4521GEH A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BV DSS 40V ▼ Good Thermal Performance RDS(ON) 36mΩ ▼ Fast Switching Performance ID 11.7A ▼ RoHS Compliant P-CH BV DSS -40V RDS(ON) 72mΩ Description ID -8.7A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage ±16 ±20 V ID@TC=25℃ Continuous Drain Current3 11.7 -8.7 A ID@TC=100℃ Continuous Drain Current3 7.4 -5.5 A IDM Pulsed Drain Current1 50 -40 A PD@TC=25℃ Total Power Dissipation 9 W Linear Derating Factor 0.07 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-c Thermal Resistance Junction-case 3 Max. 14 ℃/W Rthj-a Thermal Resistance Junction-ambient 3 Max. 110 ℃/W Data and specifications subject to change without notice Parameter 200628062-1/7 Thermal Data AP4521GEH Pb Free Plating Product The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. TO-252-4L G1 S2 D1/D2

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 40 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A - - 36 mΩ VGS=4.5V, ID=6A - - 42 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.8 - 2.5 V gfs Forward Transconductance V DS=10V, ID=8A - 8 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=40V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±16V - - ±30 uA Qg Total Gate Charge2 ID=8A - 7.4 12 nC Qgs Gate-Source Charge V DS=30V - 1.6 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 3.5 - nC td(on) Turn-on Delay Time2 VDS=20V - 5.3 - ns tr Rise Time I D=8A - 19.3 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 18 - ns tf Fall Time R D=2.5Ω -3- ns Ciss Input Capacitance V GS=0V - 590 940 pF Coss Output Capacitance V DS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Rg Gate Resistance f=1.0MHz - 1.8 2.7 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=8A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=8A, VGS=0V - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC AP4521GEH

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -40 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA - -0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-6A - - 72 mΩ VGS=-4.5V, ID=-4A - - 92 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.8 - -2.5 V gfs Forward Transconductance V DS=-10V, ID=-6A - 6 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-40V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-32V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge2 ID=-6A - 7.3 12 nC Qgs Gate-Source Charge V DS=-30V - 1.3 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 3.6 - nC td(on) Turn-on Delay Time2 VDS=-20V - 6 - ns tr Rise Time I D=-6A - 17 - ns td(off) Turn-off Delay Time R G=1Ω,VGS=-10V - 21 - ns tf Fall Time R D=3.33Ω -5- ns Ciss Input Capacitance V GS=0V - 450 720 pF Coss Output Capacitance V DS=-25V - 80 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Rg Gate Resistance f=1.0MHz - 5.6 8.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-6A, VGS=0V - - -1.3 V trr Reverse Recovery Time2 IS=-6A, VGS=0V - 22 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 14 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.N-CH , P-CH are same . AP4521GEH

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. On-Resistance vs. Reverse Diode Drain Current AP4521GEH 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10V 7.0V 5.0V 4.5V V G =3.0V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0246 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150o C 10V 7.0V 5.0V 4.5V V G =3.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =6A T C =25 o C 0.6 0.9 1.2 1.5 1.8 2.1 2.4 25 50 75 100 125 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =8A V G =10V 20.0 30.0 40.0 50.0 60.0 0 1 02 03 04 0 I D , Drain Current (A) RDS(ON) (mΩ) V GS =4.5V V GS =10V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP4521GEH Q VG 4.5V QGS QGD QG Charge 0 5 10 15 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =8A V DS =30V 100 1000 1 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0246 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. On-Resistance vs. Reverse Diode Drain Current AP4521GEH 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =2 5o C -10V -7.0V -5.0V -4.5V V G = - 3.0V 120 160 2468 1 0 -V GS ,Gate-to-Source Voltage (V) RDS(ON) (m I D =-4A T C =25 o C 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C = 150o C -10V -7.0V -5.0V -4.5V V G = - 3.0V 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =-6A V G =-10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 40.0 50.0 60.0 70.0 80.0 90.0 100.0 110.0 120.0 0 5 10 15 20 -I D , Drain Current (A) RDS(ON) (mΩ) V GS = -4.5V V GS = -10V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 0 5 10 15 20 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-6A V DS =-30V 100 1000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0246 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o CV DS =-5V Q VG -4.5V QGS QGD QG Charge