AP4519GED

AP4519GED_14 A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ ▼ ▼ ▼ Low Gate Charge N-CH BV DSS 35V ▼▼▼▼ Fast Switching Speed RDS(ON) 32mΩ ▼▼▼▼ PDIP-8 Package ID 6.2A ▼▼▼▼ RoHS Compliant P-CH BV DSS -35V RDS(ON) 64mΩ Description ID -5.0A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 35 -35 V VGS Gate-Source Voltage ±20 ±20 V ID@TA=25℃ Continuous Drain Current3 6.2 -5.0 A ID@TA=70℃ Continuous Drain Current3 5.0 -4.0 A IDM Pulsed Drain Current1 30 -30 A PD@TA=25℃ Total Power Dissipation 2.0 W Linear Derating Factor 0.016 W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 62.5 ℃/W Data and specifications subject to change without notice Parameter 201128052-1/7 Thermal Data AP4519GED Pb Free Plating Product PDIP-8 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 35 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=6A - - 32 mΩ VGS=4.5V, ID=4A - - 48 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=6A - 10 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=35V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=28V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±20V - - ±30 uA Qg Total Gate Charge2 ID=6A - 10 16 nC Qgs Gate-Source Charge V DS=25V - 3 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 5 - nC td(on) Turn-on Delay Time2 VDS=15V - 13 - ns tr Rise Time I D=1A - 6 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 25 - ns tf Fall Time R D=15Ω -3- ns Ciss Input Capacitance V GS=0V - 990 1580 pF Coss Output Capacitance V DS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 65 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.5A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=6A, VGS=0V - 24 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 23 - nC AP4519GED

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -35 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA - -0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A - - 64 mΩ VGS=-4.5V, ID=-3A - - 90 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-6A - 7 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-35V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-28V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=±20V - - ±30 uA Qg Total Gate Charge2 ID=-5A - 9 15 nC Qgs Gate-Source Charge V DS=-25V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 4 - nC td(on) Turn-on Delay Time2 VDS=-15V - 10 - ns tr Rise Time I D=-1A - 5 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 130 - ns tf Fall Time R D=15Ω - 100 - ns Ciss Input Capacitance V GS=0V - 270 430 pF Coss Output Capacitance V DS=-25V - 115 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 14 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.5A, VGS=0V - - -1.3 V trr Reverse Recovery Time2 IS=-5A, VGS=0V - 21 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 11 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 90℃/W when mounted on min. copper pad.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4519GED 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =2 5o C 10V 7.0V 5.0V 4.5V V G =3.0V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150 o C 10V 7.0V 5.0V 4.5V V G =3.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =4A T A =25 o C 0.6 0.9 1.2 1.5 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =6A V G =10V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 0 5 10 15 20 25 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =6A V DS =25V 100 1000 10000 1 5 9 1 31 72 12 5 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =90oC/W t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0246 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4519GED 0246 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =2 5o C -10V -7.0V -5.0V -4.5V V G = - 3.0V 110 130 150 2468 1 0 -V GS ,Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =-3A T A =25 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) 0246 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -10V -7.0V -5.0V -4.5V V G = - 3.0V 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =-5A V G =-10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 0 5 10 15 20 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-5A V DS =-25V 100 1000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=90oC/W t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0246 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o C V DS =-5V Q VG -4.5V QGS QGD QG Charge