AP4511GD

AP4511GD A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Low Gate Charge N-CH BV DSS 35V ▼ Fast Switching Speed RDS(ON) 25mΩ ▼ PDIP-8 Package ID 7A P-CH BV DSS -35V RDS(ON) 40mΩ Description ID -6.1A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 35 -35 V VGS Gate-Source Voltage ±20 ±20 V ID@TA=25℃ Continuous Drain Current3 7 -6.1 A ID@TA=70℃ Continuous Drain Current3 5.7 -5 A IDM Pulsed Drain Current1 30 -30 A PD@TA=25℃ Total Power Dissipation 2.0 W Linear Derating Factor 0.016 W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice Parameter Thermal Data AP4511GD RoHS-compliant Product PDIP-8 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 200805262

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 35 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=7A - 20 25 mΩ VGS=4.5V, ID=5A - 30 37 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=7A - 9 - S IDSS Drain-Source Leakage Current VDS=35V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=28V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge2 ID=7A - 11 18 nC Qgs Gate-Source Charge V DS=28V - 3 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 6 - nC td(on) Turn-on Delay Time2 VDS=18V - 12 - ns tr Rise Time I D=1A - 7 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 22 - ns tf Fall Time R D=18Ω -6- ns Ciss Input Capacitance V GS=0V - 830 1330 pF Coss Output Capacitance V DS=25V - 150 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Rg Gate Resistance f=1.0MHz - 1.2 1.8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=7A, VGS=0V - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC AP4511GD

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -35 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA - -0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-6A - 35 40 mΩ VGS=-4.5V, ID=-4A - 53 60 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-6A - 9 - S IDSS Drain-Source Leakage Current VDS=-35V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-28V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge2 ID=-6A - 10 16 nC Qgs Gate-Source Charge V DS=-28V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 6 - nC td(on) Turn-on Delay Time2 VDS=-18V - 10 - ns tr Rise Time I D=-1A - 6 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 26 - ns tf Fall Time R D=18Ω -7- ns Ciss Input Capacitance V GS=0V - 690 1100 pF Coss Output Capacitance V DS=-25V - 165 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF Rg Gate Resistance f=1.0MHz - 5.2 7.8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.7A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-6A, VGS=0V - 20 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 12 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board , t <10sec ; 90℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4511GD 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =2 5o C 10V 7.0V 5.0V 4.5V V G =3.0V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150 o C 10V 7.0V 5.0V 4.5V V G =3.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =5A T A =25 o C 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =7A V G =10V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 0 5 10 15 20 25 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =7A V DS =28V 100 1000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =90oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0246 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4511GD 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =2 5o C -10V -7.0V -5.0V -4.5V V G = - 3.0V 110 2468 1 0 -V GS ,Gate-to-Source Voltage (V) RDS(ON) (m I D =- 4A T A =25 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -10V -7.0V -5.0V -4.5V V G = - 3.0V 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =-6A V G =-10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 0 5 10 15 20 25 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =- 6A V DS = - 28V 100 1000 10000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=90oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0246 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o C V DS =-5V Q VG -4.5V QGS QGD QG Charge

Package Outline : DIP-8 Millimeters MIN NOM MAX A 3.60 4.50 5.40 A1 0.38 ---- ---- A2 2.90 3.95 5.00 B 0.36 0.46 0.56 B1 1.10 1.45 1.80 B2 0.76 0.98 1.20 C 0.20 0.28 0.36 D 9.00 9.60 10.20 E 6.10 6.65 7.20 E1 7.62 7.94 8.26 E2 8.30 9.65 11.00 e L 3.18 ---- ---- 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : DIP-8

2.540 BSC

ADVANCED POWER ELECTRONICS CORP. Package Code Part Number Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence E D A eB1B L C meet Rohs requirement for low voltage MOSFET only 4511GD YWWSSS