AP4503GM-HF

AP4503GM-HF_14 A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BV DSS 30V ▼ Low On-resistance RDS(ON) 28mΩ ▼ Fast Switching Performance ID 6.9A ▼ RoHS Compliant & Halogen-Free P-CH BV DSS -30V RDS(ON) 36mΩ Description ID -6.3A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage + 20 + 20 V ID@TA=25℃ Continuous Drain Current3 6.9 -6.3 A ID@TA=70℃ Continuous Drain Current3 5.5 -5 A IDM Pulsed Drain Current1 30 -30 A PD@TA=25℃ Total Power Dissipation 2.0 W Linear Derating Factor 0.016 W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice 201010083 Parameter Thermal Data AP4503GM-HF Halogen-Free Product Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S1 G1 SO-8

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ∆BVDSS/∆Tj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.005 -V / ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=6A - - 28 m Ω VGS=4.5V, ID=4A - - 42 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=6A - 5.7 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=6A - 9 15 nC Qgs Gate-Source Charge V DS=24V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 6 - nC td(on) Turn-on Delay Time2 VDS=15V - 8 - ns tr Rise Time I D=1A - 7 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 19 - ns tf Fall Time R D=15Ω -6- ns Ciss Input Capacitance V GS=0V - 610 970 pF Coss Output Capacitance V DS=25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=6A, VGS=0V - - 1.2 V IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V - - 1.7 A trr Reverse Recovery Time2 IS=6A, VGS=0V - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 11 - nC AP4503GM-HF

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V ∆BVDSS/∆Tj Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA - -0.004 -V / ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-6A - - 36 m Ω VGS=-4.5V, ID=-4A - - 55 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-6A - 5.8 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=-6A - 9 24 nC Qgs Gate-Source Charge V DS=-24V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 5 - nC td(on) Turn-on Delay Time2 VDS=-15V - 12 - ns tr Rise Time I D=-1A - 8 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 42 - ns tf Fall Time R D=15Ω -3 4- ns Ciss Input Capacitance V GS=0V - 960 1540 pF Coss Output Capacitance V DS=-25V - 300 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 220 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-6A, VGS=0V - - -1.2 V IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -1.7 A trr Reverse Recovery Time2 IS=-6A, VGS=0V - 24 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 18 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics -6.3 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =6A T A =25 o C 100 01234567 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C V G =3.0V 10V 7.0V 5.0V 4.5V 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C V G =3.0V 10V 7.0V 5.0V 4.5V 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j ,Junction Temperature ( o C) Normalized RDS(ON) I D =6A V G =10V 0.5 1.5 -50 0 50 100 150 T j ,Junction Temperature ( o C) VGS(th) (V) V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics -6.3 Fig 9. Maximum Safe Operating Area Fi g 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 048 1 2 1 6 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =6A V DS =24V 100 1000 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Dity factor=0.5 Single Pulse 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 10s DC Operation in this area limited by RDS(ON)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics -6.3 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 01234567 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -7.0V -5.0V -4.5V V G =-3.0V 2468 1 0 -V GS ,Gate-to-Source Voltage (V) RDS(ON) (m I D =- 6A T A =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =-6A V G =10V 1.5 2.5 -50 0 50 100 150 T j ,Junction Temperature ( o C) -VGS(th) (V) -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 01234 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C V G =-3.0V -10V -7.0V -5.0V -4.5V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics -6.3 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-6A V DS =-24V 100 1000 10000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 10s DC Operation in this area limited by RDS(ON)