AP4501AGM-HF

AP4501AGM-HF_16 A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BV DSS 30V ▼ Low On-resistance RDS(ON) 28mΩ ▼ Fast Switching Performance ID 7A ▼ RoHS Compliant P-CH BV DSS -30V RDS(ON) 50mΩ Description ID -5.3A Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage + 20 + 20 V ID@TA=25℃ Continuous Drain Current3 7.0 -5.3 A ID@TA=70℃ Continuous Drain Current3 5.8 -4.7 A IDM Pulsed Drain Current1 20 -20 A PD@TA=25℃ Total Power Dissipation 2 W Linear Derating Factor 0.016 W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice 201410175AP Parameter Thermal Data AP4501AGM-HF Halogen-Free Product Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D2 D2 SO-8

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=7A - - 28 m Ω VGS=4.5V, ID=5A - - 42 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=6A - 16 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 30 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=6A - 6 13.5 nC Qgs Gate-Source Charge V DS=24V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 3.5 - nC td(on) Turn-on Delay Time V DS=20V - 4 - ns tr Rise Time I D=1A - 19 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 3- ns tf Fall Time V GS=10V - 19 - ns Ciss Input Capacitance V GS=0V - 490 770 pF Coss Output Capacitance V DS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 2.5 5 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=7A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=6A, VGS=0V, - 13 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 5 - nC AP4501AGM-HF

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-5.3A - - 50 m Ω VGS=-4.5V, ID=-4.2A - - 90 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-5A - 12 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -30 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=-5A - 5.3 13 nC Qgs Gate-Source Charge V DS=-15V - 1.2 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 2.6 - nC td(on) Turn-on Delay Time V DS=-15V - 4 - ns tr Rise Time I D=-1A - 19 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 2- ns tf Fall Time V GS=-10V - 20 - ns Ciss Input Capacitance V GS=0V - 470 950 pF Coss Output Capacitance V DS=-25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Rg Gate Resistance f=1.0MHz - 10 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-2.6A, VGS=0V - - -1.2 V trr Reverse Recovery Time I S=-5A, VGS=0V, - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t < 10s ; 135 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 ℃ 10V 7.0V 6.0V 5.0V V G = 4.0V 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 ℃ 10V 7.0V 6.0V 5.0V V G =4.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON0 (m I D = 5A T A = 25 o C 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =7A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 30 -30 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 02468 1 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =6A V DS =2 4V 200 400 600 800 1 5 9 13 17 21 25 29 33 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -7.0V -6.0V -5.0V V G = -4.0V 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -10V -7.0V -6.0V -5.0V V G = - 4.0V 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -4.2 A T A =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -5.3 A V G = - 10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 30 -30 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG -4.5V QGS QGD QG Charge 02468 1 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -5A V DS = -15V 200 400 600 800 1 5 9 13 17 21 25 29 33 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse td(on) tr td(off)tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)

Electronics Corp. AP4501AGM-HF MARKING INFORMATION 4501AGM YWWSSS Part Number Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Package Code meet Rohs requirement for low voltage MOSFET only