AP4500GM

AP4500GM A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement N-CH BV DSS 20V ▼ ▼ ▼ ▼ Low On-resistance RDS(ON) 30mΩ ▼ ▼ ▼ ▼ Fast Switching ID 6A P-CH BV DSS -20V RDS(ON) 50mΩ Description ID -5A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current3 -5 A ID@TA=70℃ Continuous Drain Current3 -4 A IDM Pulsed Drain Current1 -20 A PD@TA=25℃ Total Power Dissipation 2.0 W Linear Derating Factor 0.016 W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 62.5 ℃/W Data and specifications subject to change without notice AP4500GM Pb Free Plating Product ±12 Parameter 200609031 Thermal Data 4.8 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. The SO-8 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SO-8

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 -V / ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A - - 30 mΩ VGS=2.5V, ID=5.2A - - 45 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - 1.2 V gfs Forward Transconductance V DS=10V, ID=6A - 18.5 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=16V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±12V - - nA Qg Total Gate Charge2 ID=6A - 9 15 nC Qgs Gate-Source Charge V DS=10V - 1.8 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 4.2 - nC td(on) Turn-on Delay Time2 VDS=10V - 29 - ns tr Rise Time I D=1A - 65 - ns td(off) Turn-off Delay Time R G=6Ω,VGS=4.5V - 60 - ns tf Fall Time R D=10Ω -5 0- ns Ciss Input Capacitance V GS=0V - 300 480 pF Coss Output Capacitance V DS=8V - 255 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=6A, VGS=0V, - 26 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 17 - nC AP4500GM ±100

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA -20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.037 -V / ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-2.2A - - 50 mΩ VGS=-2.5V, ID=-1.8A - - 90 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.5 - -1 V gfs Forward Transconductance V DS=-10V, ID=-2.2A - 2.5 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-16V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge2 ID=-5A - 14 20 nC Qgs Gate-Source Charge V DS=-16V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 5.6 - nC td(on) Turn-on Delay Time2 VDS=-10V - 10 - ns tr Rise Time I D=-2.2A - 11 - ns td(off) Turn-off Delay Time R G=6Ω,VGS=-10V - 58 - ns tf Fall Time R D=4.5Ω -3 8- ns Ciss Input Capacitance V GS=0V - 940 1500 pF Coss Output Capacitance V DS=-20V - 400 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.8A, VGS=0V - - -1.2 V trr Reverse Recovery Time I S=-2.2A, VGS=0V, - 25 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 21 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad. ± 12V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4500GM 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 4.5V 3.5V 3.0V 2.5V V GS =2.0V T A =25 o C 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 4.5V 3.5V 3.0V 2.5V V GS =2.0V T A =150 o C 2345 V GS (V) RDS(ON) (m ΩΩΩΩ) I D =6A T A =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =6A V GS =4.5V 0.01 0.10 1.00 10.00 100.00 V SD (V) IS(A) T j =25 o CT j =150 o C 0.5 1.5 -50 0 50 100 150 T j ,Junction Temperature ( o C) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 V DS (V) ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms 10s DC 02468 1 0 1 2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =6A V DS =10V 100 1000 1 5 9 1 31 72 12 52 9 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4500GM 0.6 0.8 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V GS = -4.5V I D =-2.2A 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C 4.5V 4.0V 3.5V 3.0V V GS =2. 5 V 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C 4.5V 4.0V 3.5V 3.0V V GS =2. 5 V 100 2345 -V GS (V) RDS(ON) (m ΩΩΩΩ) I D =-2.2A T A =25 ℃℃℃℃ 0.01 0.10 1.00 10.00 100.00 -V SD (V) -IS(A) T j =25 o CT j =150 o C 0.2 0.4 0.6 0.8 -50 0 50 100 150 T j ,Junction Temperature ( o C) -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig9. Maximum Safe Operating Area Fi g 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 -V DS (V) -ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms 10s DC 048 1 2 1 6 2 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-5A V DS =-16V 100 1000 10000 1 5 9 13 17 21 25 29 -V DS (V) C (pF) f=1.0MHz Ciss Coss Crss td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge