AP4439GH-HF_16 A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS -30V ▼ Simple Drive Requirement RDS(ON) 10mΩ ▼ Fast Switching Characteristic ID -58A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance Junction-case 2.5 ℃/W Rthj-a 62.5 ℃/W Data and specifications subject to change without notice Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Total Power Dissipation Drain Current, VGS @ 10V -37 Pulsed Drain Current1 -200 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, V GS @ 10V AP4439GH-HF Rating Halogen-Free Product -30 201409102AP +25 -58 -55 to 150 Parameter Maximum Thermal Resistance, Junction-ambient (PCB mount)3 -55 to 150 Thermal Data G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S TO-252(H)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A - - 10 m Ω VGS=-4.5V, ID=-20A - - 17 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-30A - 55 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=-20A - 35 73.6 nC Qgs Gate-Source Charge V DS=-24V - 7 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 18 - nC td(on) Turn-on Delay Time V DS=-15V - 9 - ns tr Rise Time I D=-10A - 33 - ns td(off) Turn-off Delay Time R G=3.3Ω -8 0- ns tf Fall Time V GS=-10V - 85 - ns Ciss Input Capacitance V GS=0V - 2770 5080 pF Coss Output Capacitance V DS=-25V - 420 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 375 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-30A, VGS=0V - - -1.2 V trr Reverse Recovery Time I S=-10A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 24 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 160 200 0 4 8 12 16 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =2 5o C -10V -7.0 V -6.0 V -5.0 V V G = - 4.0 V 100 120 02468 1 0 1 2 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -10V -7.0V -6.0V -5.0V V G = - 4.0 V T C = 150o C 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -20 A T C =25 ℃ 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -30A V G = -10V 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C I D = -250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0 2 04 06 08 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) V DS =-24V I D = -20A 1000 2000 3000 4000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 100 1000 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse Operation in this area limited by RDS(ON)

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 4439GH YWWSSS meet Rohs requirement for low voltage MOSFET only