AP4435GM-HF A-POWER | Alldatasheet

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Technical content

Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -30V ▼ Low On-resistance RDS(ON) 20mΩ ▼ Fast Switching Characteristic ID -9A ▼ RoHS Compliant

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 50 ℃/W Data and specifications subject to change without notice Halogen-Free Product Thermal Data Parameter Total Power Dissipation 2.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Storage Temperature Range Continuous Drain Current3 -7.3 Pulsed Drain Current1 -50 0.02Linear Derating Factor Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 200811216 AP4435GM-HF Rating - 30 + 20 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S S S G D D D D SO-8 G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-7A - - 20 m Ω VGS=-4.5V, ID=-5A - - 32 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-7A - 16 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=+20V - - + 100 nA Qg Total Gate Charge2 ID=-7A - 18 29 nC Qgs Gate-Source Charge V DS=-24V - 3 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 10 - nC td(on) Turn-on Delay Time2 VDS=-15V - 8 - ns tr Rise Time I D=-1A - 6.6 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 44 - ns tf Fall Time R D=15Ω -3 4- ns Ciss Input Capacitance V GS=0V - 1175 1690 pF Coss Output Capacitance V DS=-25V - 195 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 190 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-2.1A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-7A, VGS=0V, - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 18 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad. AP4435GM-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -7.0V -5.0V -4.5V V G = -3.0V 0246 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C V G = -3.0V -10V -7.0V -5.0V -4.5V 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -7A V G = -10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.8 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V) 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -5A T A =25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 125℃/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 1 02 03 04 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -7A V DS = -24V 100 1000 10000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG -4.5V QGS QGD QG Charge 0123456 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o CV DS = -5V

A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 c 0.19 0.22 0.25 D 4.80 4.90 5.00 E 5.80 6.15 6.50 E1 3.80 3.90 4.00 e G L 0.38 － 0.90 α 0.00 4.00 8.00 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8

1.27 TYP

0.254 TYP

Package Outline : SO-8 ADVANCED POWER ELECTRONICS CORP. e B 5678 D A G Part Number 4435GM YWWSSS Package Code Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product E meet Rohs requirement