AP4435GJ-HF A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -30V ▼ Lower On-resistance RDS(ON) 20mΩ ▼ Fast Switching Characteristic ID -40A ▼ RoHS Compliant & Halogen-Free

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2.8 ℃/W Rthj-a 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 200907154 Maximum Thermal Resistance, Junction-ambient (PCB mount)3 AP4435GH/J-HF Rating Halogen-Free Product 44.6 -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V -30 +20 -40 0.36 Continuous Drain Current, VGS @ 10V -25 Pulsed Drain Current1 -150 Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range -55 to 150 Linear Derating Factor Thermal Data G D S G D S TO-251(J) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4435GJ) is available for low-profile applications. Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-252(H)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-26A - - 20 m Ω VGS=-4.5V, ID=-16A - - 36 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-26A - 31 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=125oC) VDS=-24V, VGS=0V - - -250 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=-26A - 16.5 32 nC Qgs Gate-Source Charge V DS=-25V - 2.7 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 11 - nC td(on) Turn-on Delay Time2 VDS=-15V - 7.5 - ns tr Rise Time I D=-26A - 64 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 24 - ns tf Fall Time R D=0.58Ω -9 2- ns Ciss Input Capacitance V GS=0V - 1160 1970 pF Coss Output Capacitance V DS=-25V - 195 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 175 - pF Rg Gate Resistance f=1.0MHz - 5 17 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-26A, VGS=0V - - -1.3 V trr Reverse Recovery Time2 IS=-10A, VGS=0V, - 25 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board AP4435GH/J-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.01E+08 Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =2 5o C -10V -7.0V -6.0V -5.0V V G =-4. 0V 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = - 26 A V G =-10V 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) 0.0 6.5 13.0 19.5 26.0 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C = 150o C -10V -7.0V -6.0V -5.0V V G =-4. 0V 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = - 16 A T C =25 ℃

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP4435GH/J-HF Q VG -4.5V QGS QGD QG Charge 400 800 1200 1600 2000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 1 02 03 04 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -26 A V DS = -25 V 100 1000 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse td(on) tr td(off)tf VDS VGS 10% 90%