AP4424GM-HF

AP4424GM-HF_14 A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Low On-resistance RDS(ON) 9mΩ ▼ Fast Switching Characteristic ID 13.8A ▼ RoHS Compliant & Halogen-Free

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 50 ℃/W Data and specifications subject to change without notice 201012064 Halogen-Free Product Thermal Data Parameter Total Power Dissipation 2.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor Storage Temperature Range Continuous Drain Current3 11 Pulsed Drain Current1 50 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current AP4424GM-HF Rating +25 13.8 0.02 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S S S S G D D D D SO-8

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=13A - - 9 m Ω VGS=4.5V, ID=10A - - 14 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=13A - 21 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+25V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=13A - 23 35 nC Qgs Gate-Source Charge V DS=24V - 6 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 15 - nC td(on) Turn-on Delay Time2 VDS=15V - 13 - ns tr Rise Time I D=1A - 9 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 35 - ns tf Fall Time R D=15Ω -1 7- ns Ciss Input Capacitance V GS=0V - 1920 3070 pF Coss Output Capacitance V DS=25V - 410 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 300 - pF Rg Gate Resistance f=1.0MHz - 0.9 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2.1A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=13A, VGS=0V, - 33 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 26 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP4424GM-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =1 0A T A =25 ℃ 120 150 180 210 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =2 5o C 10V 7.0V 5.0V 4.5V V G =4.0V 100 120 140 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 5.0V 4.5V V G =4.0V 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =1 3 A V G =10V 1.00 1.50 2.00 2.50 3.00 -50 0 50 100 150 T j , Junction Temperature ( o C) VGS(th) (V) V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 0 1 02 03 04 05 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =15V V DS =20V V DS =24V I D =1 3A 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON)