AP4415GH A-POWER | Alldatasheet
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Technical content
Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -35V ▼ Low On-resistance RDS(ON) 36mΩ ▼ Fast Switching Characteristic ID -24A
Description
ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice RoHS-compliant Product Thermal Data Parameter Total Power Dissipation 31.25 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor Storage Temperature Range Continuous Drain Current, VGS @ 10V -15 Pulsed Drain Current1 -80 0.25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V 200805263 AP4415GH/J Rating -35 ±25 -24 G D S G D S TO-252(H) G D S TO-251(J) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4415GJ) is available for low-profile applications.
Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -35 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-16A - - 36 mΩ VGS=-4.5V, ID=-12A - - 60 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-16A - 18 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=±25V - - ±100 nA Qg Total Gate Charge2 ID=-16A - 11 18 nC Qgs Gate-Source Charge V DS=-24V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 4 - nC td(on) Turn-on Delay Time2 VDS=-15V - 10 - ns tr Rise Time I D=-16A - 52 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 20 - ns tf Fall Time R D=0.94Ω -7- ns Ciss Input Capacitance V GS=0V - 990 1580 pF Coss Output Capacitance V DS=-25V - 220 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 150 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-16A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-16A, VGS=0V, - 25 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP4415GH/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.01E+08 Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =2 5o C -10V -7.0V -5.0V -4.5V V G = -3.0 V 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = - 16 A V G = -10V 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) 0.0 1.8 3.5 5.3 7.0 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C = 150o C -10V -7.0V -5.0V -4.5V V G = -3.0 V 105 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = - 12 A T C =25 ℃
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP4415GH/J td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 1 02 03 04 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = - 16 A V DS = - 24 V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC
Original Original Original A 2.10 2.30 2.50 A1 0.60 1.20 1.80 B1 0.40 0.60 0.80 B2 0.60 0.95 1.25 c 0.40 0.50 0.65 c1 0.40 0.55 0.70 D 6.00 6.50 7.00 D1 4.80 5.40 5.90 E1 5.00 5.50 6.00 E2 1.20 1.70 2.20 e ---- 2.30 ---- F 7.00 --- 16.70 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-251 ADVANCED POWER ELECTRONICS CORP. Millimeters SYMBOLS 4415GJ YWWSSS Part Number Package Code A c e D E1 E F e Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence LOGO meet Rohs requirement
Package Outline : TO-252 Millimeters MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 F 2.20 2.63 3.05 F1 0.5 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-252 SYMBOLS ADVANCED POWER ELECTRONICS CORP. ee D FB1 F1 A3 C R : 0.127~0.381 (0.1mm Part Number Package Code 4415GH YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence LOGO meet Rohs requirement