AP4413GM

AP4413GM A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement BVDSS -20V ▼ ▼ ▼ ▼ Low On-resistance RDS(ON) 30mΩ ▼ ▼ ▼ ▼ Fast Switching Characteristic ID -7.8A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 50 ℃/W Data and specifications subject to change without notice Pb Free Plating Product 200413042 AP4413GM Rating -20 -7.8 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current3 -6.2 Pulsed Drain Current1 -30 2.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.02 Storage Temperature Range Thermal Data Parameter Total Power Dissipation ±20 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S S S G D D D D SO-8 G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.01 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-7A - - 30 mΩ VGS=-4.5V, ID=-4A - - 40 mΩ VGS=-2.5V, ID=-2A - - 65 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.5 - -1.5 V gfs Forward Transconductance V DS=-10V, ID=-7A - 16 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-16V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge2 ID=-7A - 17 27 nC Qgs Gate-Source Charge V DS=-16V - 4 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 7 - nC td(on) Turn-on Delay Time2 VDS=-10V - 12 - ns tr Rise Time I D=-2A - 11 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 40 - ns tf Fall Time R D=10Ω -1 3- ns Ciss Input Capacitance V GS=0V - 1140 1820 pF Coss Output Capacitance V DS=-25V - 250 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 210 - pF Rg Gate Resistance f=1.0MHz - 4.3 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-2A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-7A, VGS=0V, - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 22 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad. AP4413GM ±20V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 120 012345678 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =2 5o C -10V -7.0V -5.0V -4.5V V G = - 2.5 V 012345678 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V V G = - 2.5 V T A = 150o C 13579 1 1 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =-4A T A =25 ℃℃℃℃ 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =-7A V G =-10V -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V) -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP4413GM td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 01 0 2 0 3 0 4 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -7A V DS = -16V 100 1000 10000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse