AP4412GM A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 25V ▼ Simple Drive Requirement RDS(ON) 33mΩ ▼ Fast Switching ID 7A ▼ RoHS Compliant

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 50 ℃/W Data and specifications subject to change without notice 200415051-1/6 AP4412GM Pb Free Plating Product Parameter Rating Drain-Source Voltage 25 Gate-Source Voltage ±20 Continuous Drain Current 3 7 Continuous Drain Current3 5.8 Pulsed Drain Current1 30 Total Power Dissipation 2.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.02 Thermal Data Parameter Storage Temperature Range The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. S S S G D D D D SO-8 G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 25 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=7A - - 33 mΩ VGS=4.5V, ID=3.5A - - 60 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=7A - 12 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=25V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=20V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge2 ID=7A - 7 - nC Qgs Gate-Source Charge V DS=16V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=5V - 5 - nC td(on) Turn-on Delay Time2 VDS=16V - 7 - ns tr Rise Time I D=7A - 22 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 14.5 - ns tf Fall Time R D=2.3Ω -6- ns Ciss Input Capacitance V GS=0V - 218 - pF Coss Output Capacitance V DS=25V - 155 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 63 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V - - 2.08 A VSD Forward On Voltage2 Tj=25℃, IS=2.3A, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125℃/W when mounted on Min. copper pad. AP4412GM

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 8.0V 6.0V 5.0V V GS =4.0V 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 8.0V 6.0V 5.0V V GS =4.0V 0.6 0.8 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =7A V GS =10V 3456789 1 0 1 1 V GS (V) RDS(ON) (m I D =7A T C =25 ℃

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP4412GM 0.01 0.1 100 0.1 1 10 100 V DS (V) ID (A) T C =25 o C Single Pulse 1ms 10ms 100ms 10s DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse 25 50 75 100 125 150 T c , Case Temperature ( o C) ID , Drain Current (A) 0 50 100 150 T c , Case Temperature ( o C) PD (W)

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V) 02468 1 0 1 2 1 4 1 6 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =7A V DS =16V 100 1000 1 5 9 1 31 72 12 52 9 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 0.1 100 V SD (V) IS(A) Tj=25 o CTj=150 o C

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG QGS QGD QG Charge 0.64 x RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS I D I G 1~ 3 mA 0.64 x RATED VDS TO THE OSCILLOSCOPE 10 v D G S VDS VGS RG RD