AP4407GR

AP4407GR A-POWER | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Lower On-resistance BVDSS -30V ▼ ▼ ▼ ▼ Simple Drive Requirement RDS(ON) 14mΩ ▼ ▼ ▼ ▼ Fast Switching Characteristic ID -50A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 2.3 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data and specifications subject to change without notice Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V -55 to 150 Linear Derating Factor -55 to 150 Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Continuous Drain Current, VGS @ 10V -32 Pulsed Drain Current1 180 200218051 AP4407GR Rating -30 ±25 -50 0.4 Pb Free Plating Product G D S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-262(R)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.01 -V / ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-24A - - 14 mΩ VGS=-4.5V, ID=-16A - - 23 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-24A - 36 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS= ±25V - - nA Qg Total Gate Charge2 ID=-24A - 35 60 nC Qgs Gate-Source Charge V DS=-24V - 5 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 26 - nC td(on) Turn-on Delay Time2 VDS=-15V - 11 - ns tr Rise Time I D=-24A - 64 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 63 - ns tf Fall Time R D=0.63Ω - 100 - ns Ciss Input Capacitance V GS=0V - 2120 3390 pF Coss Output Capacitance V DS=-25V - 630 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 550 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-24A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-24A, VGS=0V, - 39 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 38 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 100 150 200 250 012345678 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =25 o C -10V -8.0V -6.0V -4.5V V G =-3.0V 3579 1 1 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D = -16 A T C =25 ℃℃℃℃ 100 150 012345678 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -10V -8.0V -6.0V -4.5V V G =-3.0V T C =150 o C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =-24A V G =-10V 0.5 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 2 04 06 08 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = - 24 A V DS = -24V 100 1000 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse