AP4407F A-POWER | Alldatasheet

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P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower On-resistance BVDSS -30V ▼ Simple Drive Requirement RDS(ON) 14mΩ ▼ Fast Switching Characteristic ID -50A

Description

V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG TJ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 3.72 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. ℃/W Data and specifications subject to change without notice -55 to 150 Linear Derating Factor Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range 33.6 -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V -32 Pulsed Drain Current1 180 200305041 AP4407F/I Rating -30 ±25 -50 0.27 G D S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 isolation package is universally preferred for all commercial- industrial applications and suited for low voltage applications such as DC/DC converters and high current ,high speed switching circuits. GD S TO-220FM(F) G D S TO-220CFM(I)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA -0.01 V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-24A mΩ VGS=-4.5V, ID=-16A mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA V gfs Forward Transconductance VDS=-10V, ID=-24A S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V uA Drain-Source Leakage Current (Tj=150oC) VDS=-24V, VGS=0V -25 uA IGSS Gate-Source Leakage VGS= ±25V nA Qg Total Gate Charge2 ID=-24A nC Qgs Gate-Source Charge VDS=-24V nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V nC td(on) Turn-on Delay Time2 VDS=-15V ns tr Rise Time ID=-24A ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V ns tf Fall Time RD=0.63Ω 100 ns Ciss Input Capacitance VGS=0V 2120 3390 pF Coss Output Capacitance VDS=-25V 630 pF Crss Reverse Transfer Capacitance f=1.0MHz 550 pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-24A, VGS=0V -1.2 V trr Reverse Recovery Time2 IS=-24A, VGS=0V, ns Qrr Reverse Recovery Charge dI/dt=-100A/µs nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.2 0.4 0.6 0.8 1.2 1.4 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o C T j =150 o C 100 150 200 250 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =25 o C -10V -8.0V -6.0V -4.5V V G =-3.0V -V GS , Gate-to-Source Voltage (V) RDS(ON) (mΩ Ω Ω I D = -16 A T C =25 ℃ 100 150 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -10V -8.0V -6.0V -4.5V V G =-3.0V T C =150 o C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =-24A V G =-10V 0.5 1.0 1.5 2.0 2.5 3.0 -50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 100 1000 10000 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = - 24 A V DS = -24V 100 1000 0.1 100 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms 100ms DC T C =25 o C Single Pulse 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse