AP4303 BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

Input Offset Voltage: 0.5mV Supply Current: 250µA per Op Amp at 5.0V Sup- ply Voltage Unity Gain Bandwidth: 1MHz Output Voltage Swing: 0 to (VCC - 1.5)V Power Supply Range: 3 to 18V Voltage Reference Reference Voltage Tolerance: 0.5%, 1% Sink Current Capability from 0.1 to 80mA Output Dynamic Impedance: 0.2Ω Externally Adjusted Output Voltage Reference: 1.25V for AP4303-C and 1.24V for AP4303-D

Applications

Figure 1. Package Types of AP4303

QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Data Sheet Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Circuit Type Voltage Tolerance A: 0.5% B: 1% Package P: DIP-16 M: SOIC-16 Output Voltage Reference C: 1.25V D: 1.24V AP4303 - E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube Package Reference Voltage Voltage Tolerance Tempera- ture Range Part Number Marking ID Packing Type Tin Lead Lead Free Tin Lead Lead Free DIP-16 1.25V 0.5% -40 to 85oC AP4303AP-C AP4303AP-CE1 AP4303AP-C AP4303AP-CE1 Tube AP4303BP-C AP4303BP-CE1 AP4303BP-C AP4303BP-CE1 1.24V 0.5% AP4303AP-D AP4303AP-DE1 AP4303AP-D AP4303AP-DE1 AP4303BP-D AP4303BP-DE1 AP4303BP-D AP4303BP-DE1 SOIC-16 1.25V 0.5% -40 to 85oC AP4303AM-C AP4303AM-CE1 AP4303AM-C AP4303AM-CE1 Tube AP4303AM-CTR AP4303AM-CTRE1 AP4303AM-C AP4303AM-CE1 Tape & Reel AP4303BM-C AP4303BM-CE1 AP4303BM-C AP4303BM-CE1 Tube AP4303BM-CTR AP4303BM-CTRE1 AP4303BM-C AP4303BM-CE1 Tape & Reel 1.24V 0.5% AP4303AM-D AP4303AM-DE1 AP4303AM-D AP4303AM-DE1 Tube AP4303AM-DTR AP4303AM-DTRE1 AP4303AM-D AP4303AM-DE1 Tape & Reel AP4303BM-D AP4303BM-DE1 AP4303BM-D AP4303BM-DE1 Tube AP4303BM-DTR AP4303BM-DTRE1 AP4303BM-D AP4303BM-DE1 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.

Ordering Information

QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Data Sheet Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Parameter Min Max Unit Supply Voltage V Ambient Temperature -40 oC Recommended Operating Conditions Note 1: Stresses greater than those listed under "Absolute Maximum Ratings " may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max- imum Ratings " for extended periods may affect device reliability. Parameter Symbol Value Unit Power Supply Voltage (VCC to GND) VCC V Op Amp Input Voltage Range VIN -0.3 to VCC + 0.3 V Op Amp Input Differentials Voltage VID V Voltage Reference Cathode Current (Pin 9) IK 100 mA Power Dissipation DIP-16 PD 1000 mW SOIC-16 1000 Storage Temperature Range TSTG -65 to 150 oC ESD Protection Voltage (Machine Model) >200 V Absolute Maximum Ratings (Note 1)

QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Data Sheet Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Operating Conditions: VCC = +5V, TA= 25oC unless otherwise specified.

Electrical Characteristics

Total Supply Current, Excluding Current in Voltage Reference VCC = 5V, no load, -40oC ≤TA ≤85oC 1.0 1.6 mA VCC = 18V, no load, -40oC ≤TA ≤85oC 1.2 2.4 Voltage Reference Section Reference Voltage for AZ4303C IKA= 10mA TA = 25oC 0.5% tolerance 1.244 1.250 1.256 V 1% tolerance 1.237 1.263 Reference Voltage for AZ4303D IKA = 10mA TA = 25oC 0.5% tolerance 1.234 1.240 1.246 V 1% tolerance 1.227 1.252 Reference Voltage Deviation over Full Temperature Range IKA = 10mA, TA = -40 to 85oC mV Minimum Cathode Current for Regulation 0.1 0.2 mA Ratio of Change in VREF to that of Cathode Voltage IKA = 10mA VREF ~ 10V 1.0 2.7 mV/V 10V ~ 18V 0.5 2.0 Reference Current IKA = 10mA, R1 = 10K, R2 = ∞ 0.7 µA The Deviation of Reference Current over Temperature VKA = VREF, IKA = 10mA, TA = -40oC to 85oC 0.4 1.2 µA Off-State Cathode Current VREF = 0, VKA = 18V 0.05 1.0 µA Dynamic Impedance IKA = 1.0 to 80mA, f<1kHz 0.2 0.5 Ω Op Amp Section (per OPA) (VCC = 5V, VO = 1.4V, TA = 25oC, Unless otherwise noted) Input Offset Voltage TA = 25oC 0.5 mV TA = -40 to 85oC Input Offset Voltage Temperature Drift TA = -40 to 85oC µV/ oC Input Offset Current TA = 25oC nA Input Bias Current TA = 25oC 150 nA

QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Data Sheet Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) Operating Conditions: VCC = +5V, TA= 25oC unless otherwise specified. Parameter Conditions Min Typ Max Unit Op Amp Section (per Op Amp) (VCC = 5V, VO = 1.4V, TA = 25oC, unless otherwise noted) Input Offset Voltage TA = 25oC 0.5 mV TA = -40 to 85oC Input Offset Voltage Temperature Drift TA = -40 to 85oC µV/ oC Input Offset Current TA = 25oC nA Input Bias Current TA = 25oC 150 nA Input Voltage Range VCC = 0 to 18V VCC - 1.5 V Common Mode Rejection Ratio TA = 25oC, VCM = 0 to 3.5V dB Large Signal Voltage Gain VCC = 15V, RL = 2kΩ, VO = 1.4 to 11.4V 100 dB Power Supply Rejection Ratio VCC = 5 to 18V dB Output Current Source VCC = 15V, VID = 1V, VO = 2V mA Sink VCC = 15V, VID = -1V, VO = 2V mA Output Voltage Swing (High) VCC = 18, RL = 10kΩ, VID = 1V 16.5 V Output Voltage Swing (Low) VCC = 18, RL = 10kΩ, VID = -1V 100 mV Slew Rate VCC = 18V, RL = 2kΩ, AV = 1, VIN = 0.5 to 2V, CL = 100pF 0.3 0.5 V/µ s Gain Bandwidth Product VCC = 18V, RL = 2kΩ, CL = 100pF, VIN = 10mV, f=100kHz 0.7 MHz

QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Data Sheet Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Mechanical Dimensions DIP-16 Unit: mm(inch) 18.800(0.740) 0.254(0.010) 2.540(0.100) 1.524(0.060)TYP Φ3.000(0.118) Depth 0.050(0.002) 0.150(0.006) 0.700(0.028) 19.200(0.756) R0.750(0.030) 6.200(0.244) 3.000(0.118) 3.600(0.142) 3.710(0.146) 4.310(0.170) 0.510(0.020)MIN 0.360(0.014) 0.560(0.022) 6.600(0.260) 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 3.200(0.126) 3.600(0.142) 7.620(0.300)TYP TYP

QUAD OP AMP AND VOLTAGE REFERENCE AP4303 Data Sheet Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited SOIC-16 Unit: mm(inch) 10.000(0.394) 6.040(0.238) 0.406(0.016) 20:1 A 1.650(0.065) 0.700(0.028) B C 1.000(0.039) S 1.000(0.039) 0.200(0.008) 20:1 B C 50:1 C-C 0.250(0.010) 0.200(0.008)MIN 0.500(0.020) 0.600(0.024) 0.250(0.010) Depth 0.060(0.002) 0.100(0.004) 2.000(0.079) 1.300(0.051) 1.000(0.039) 1.270(0.050) Depth 0.200(0.008) 0.250(0.010) 0.150(0.006) R0.200(0.008) R0.200(0.008) 0.203(0.008) A 3.940(0.155) 9.5° 0.400(0.016)×45° φ φ Mechanical Dimensions (Continued)

8F, B Zone, 900 Yi Shan Road, Shanghai 200233, PRC Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor (Taiwan) Company Limited Room 2210, 22nd Fl, 333, Keelung Road, Sec. 1, TaiPei (110), Taiwan Tel: +886-2-2758 6828, Fax: +886-2-2758 6892 IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any pro- ducts or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limi- ted does not convey any license under its patent rights or other rights nor the rights of others. http://www.bcdsemi.com BCD Semiconductor Corporation 3170 De La Cruz Blvd, Suite # 105 Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386 Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, PRC Tel: +86-21-6485-1491, Fax: +86-21-5450-0008

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