AP4302_06 BCDSEMI | Alldatasheet
Document overview
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- PDF pages: 12
Technical content
Features
- Input Offset V oltage: 0.5mV
- Supply Current: 250µA per Op Amp at 5.0V Sup- ply V oltage
- Unity Gain Bandwidth: 1MHz
- Output V oltage Swing: 0 to (VCC-1.5)V
- Power Supply Range: 3 to 18V Voltage Reference
- Reference V oltage Tolerance: 0.5%, 1%
- Sink Current Capability from 0.1 to 80mA
- Output Dynamic Impedance: 0.2Ω
- Externally Adjusted V oltage Reference: 2.5V
Applications
- Battery Charger
- Switching Power Supply
- Mother Board
Figure 1. Package Types of AP4302
QUAD OP AMP AND VOLTAGE REFERENCE AP4302 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Data Sheet Package Voltage Tol- erance Tempera- ture Range Part Number Marking ID Packing TypeTin Lead Lead Free Tin Lead Lead Free DIP-16 0.5% -40 to 85oC AP4302AP AP4302AP-E1 AP4302AP AP4302AP-E1 Tube 1% AP4302BP AP4302BP-E1 AP4302BP AP4302BP-E1 SOIC-16 0.5% -40 to 85oC AP4302AM AP4302AM-E1 AP4302AM AP4302AM-E1 Tube AP4302AMTR AP4302AMTR-E1 AP4302AM AP4302AM-E1 Tape & Reel AP4302BM AP4302BM-E1 AP4302BM AP4302BM-E1 Tube AP4302BMTR AP4302BMTR-E1 AP4302BM AP4302BM-E1 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Circuit Type V oltage Tolerance A: 0.5% B: 1% Package P: DIP-16 M: SOIC-16 AP4302 - E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube
Ordering Information
QUAD OP AMP AND VOLTAGE REFERENCE AP4302 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Data Sheet Parameter Symbol Value Unit Power Supply V oltage (VCC to GND) V CC 20 V Input V oltage Range V IN -0.3 to VCC+0.3 V Op Amp Input Differential V oltage V ID 20 V V oltage Reference Cathode Current I K 100 mA Power Dissipation (TA=25oC) PD DIP-16 1000 mW SOIC-16 850 Operating Junction Temperature T J 150 oC Storage Temperature Range T STG -65 to 150 oC Lead Temperature (Soldering 10s) T L 260 oC Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only , and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max- imum Ratings" for extended periods may affect device reliability. Parameter Min Max Unit Supply V oltage 3 18 V Ambient Temperature -40 85 oC Recommended Operating Conditions Absolute Maximum Ratings (Note 1)
QUAD OP AMP AND VOLTAGE REFERENCE AP4302 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Data Sheet Operating Conditions: VCC=+5V , TA=25oC unless otherwise specified.
Electrical Characteristics
Parameter Conditions Min Typ Max Unit Total Supply Current, Excluding Current in V oltage Reference VCC=5V , no load, -40oC ≤TA ≤85oC 1.0 1.6 mA VCC=18V , no load, -40oC ≤TA ≤85oC 1.2 2.4 Voltage Reference Section Reference V oltage I KA=10mA TA=25oC 0.5% tolerance 2.487 2.500 2.513 V 1% tolerance 2.475 2.525 Reference V oltage Deviation over Full Temperature Range IKA=10mA, TA=-40 to 85oC 52 4 m V Minimum Cathode Current for Regulation 0.1 0.2 mA Ratio of Change in VREF to that of Cath- ode V oltage IKA=10mA V REF to 10V 1.0 2.7 mV/V 10V to 18V 0.5 2.0 Reference Current IKA=10mA, R1=10K, R2=∞ 0.7 4 µA The Deviation of Reference Current over Temperature VKA=VREF, IKA=10mA, TA=-40 to 85oC 0.4 1.2 µA Off-State Cathode Current V REF=0, VKA=18V 0.05 1.0 µA Dynamic Impedance I KA=1.0 to 80mA, f<1kHz 0.2 0.5 Ω
QUAD OP AMP AND VOLTAGE REFERENCE AP4302 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Data Sheet Electrical Characteristics (Continued) Operating Conditions: VCC=+5V , TA=25oC unless otherwise specified. Parameter Conditions Min Typ Max Unit Op Amp Section (per Op Amp) (VCC=5V , VO=1.4V , TA=25oC, unless otherwise noted) Input Offset V oltage TA=25oC 0.5 3 mV TA=-40 to 85oC 5 Input Offset V oltage Temperature Drift TA=-40 to 85oC 7 µV/o C Input Offset Current TA=25oC 23 0 n A Input Bias Current TA=25oC 20 150 nA Input V oltage Range V CC=0 to 18V 0 VCC-1.5 V Common Mode Rejection Ratio TA=25oC, VCM=0 to 3.5V 70 85 dB Large Signal V oltage Gain V CC=15V , RL=2kΩ, VO=1.4 to 11.4V 85 100 dB Power Supply Rejection Ratio V CC=5 to 18V 70 90 dB Output Current Source V CC=15V , VID=1V , VO=2V 20 40 mA Sink V CC=15V , VID=-1V , VO=2V 10 20 mA Output V oltage Swing (High) V CC=18V , RL=10kΩ, VID=1V 16 16.5 V Output V oltage Swing (Low) V CC=18V , RL=10kΩ, VID=-1V 17 100 mV Slew Rate V CC=18V , RL=2kΩ, AV=1, VIN=0.5 to 2V , CL=100pF 0.3 0.5 V/µ s Gain Bandwidth Product V CC=18V , RL=2kΩ, CL=100pF, VIN=10mV , f=100kHz 0.7 1 MHz
Figure 10. Op Amp Open Loop Frequency Response
100 Voltage Gain (dB)
Figure 12. Use AP4302 Internal Parts to Build a Linear Regulator Figure 11. Op Amp Input Current
QUAD OP AMP AND VOLTAGE REFERENCE AP4302 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Data Sheet Mechanical Dimensions DIP-16 Unit: mm(inch) 18.800(0.740) 0.254(0.010) 2.540(0.100) 1.524(0.060)TYP Φ3.000(0.118) Depth 0.050(0.002) 0.150(0.006) 0.700(0.028) 19.200(0.756) R0.750(0.030) 6.200(0.244) 3.000(0.118) 3.600(0.142) 3.710(0.146) 4.310(0.170) 0.560(0.022) 6.600(0.260) 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 3.200(0.126) 3.600(0.142) 7.620(0.300)TYP TYP
QUAD OP AMP AND VOLTAGE REFERENCE AP4302 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Data Sheet SOIC-16 Unit: mm(inch) 10.000(0.394) 6.040(0.238) 0.406(0.016) 20:1 A 1.650(0.065) 0.700(0.028) B C 1.000(0.039) S 1.000(0.039) 0.200(0.008) 20:1 B C 50:1 C-C 0.250(0.010) 0.200(0.008)MIN 0.500(0.020) 0.600(0.024) 0.250(0.010) Depth 0.060(0.002) 0.100(0.004) 2.000(0.079) 1.270(0.050) Depth 0.200(0.008) 0.250(0.010) 0.150(0.006) R0.200(0.008) R0.200(0.008) 0.203(0.008) A 3.940(0.155) 8°9.5° 8°7° 0.400(0.016)×45° φ φ Mechanical Dimensions (Continued)
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