AP4301_06 BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Input Offset V oltage: 0.5mV
  • Supply Current: 250µA per Op-Amp at 5.0V Sup- ply V oltage
  • Unity Gain Bandwidth: 1MHz
  • Output V oltage Swing: 0 to (VCC-1.5)V
  • Power Supply Range: 3 to 18V Voltage Reference
  • Fixed Output V oltage Reference: 1.25V , 1.24V
  • V oltage Tolerance: 0.5%, 1%
  • Sink Current Capability from 0.1 to 80mA

Applications

  • Battery Charger
  • Switching Power Supply

Figure 1. Package Types of AP4301

DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Data Sheet Circuit Type V oltage Tolerance A: 0.5% B: 1% Package P: DIP-8 M: SOIC-8 Output V oltage Reference C: 1.25V D: 1.24V AP4301 - E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube Package Refer- ence Voltage Voltage Tolerance Tempera- ture Range Part Number Marking ID Packing TypeTin Lead Lead Free Tin Lead Lead Free DIP-8 1.25V 0.5% -40 to 85oC AP4301AP-C AP4301AP-CE1 AP4301AP-C AP4301AP-CE1 Tube 1% AP4301BP-C AP4301BP-CE1 AP4301BP-C AP4301BP-CE1 1.24V 0.5% AP4301AP-D AP4301AP-DE1 AP4301AP-D AP4301AP-DE1 1% AP4301BP-D AP4301BP-DE1 AP4301BP-D AP4301BP-DE1 SOIC-8 1.25V 0.5% -40 to 85oC AP4301AM-C AP4301AM-CE1 AP4301AM-C AP4301AM-CE1 Tube AP4301AM-CTR AP4301AM-CTRE1 AP4301AM-C AP4301AM-CE1 Tape & Reel AP4301BM-C AP4301BM-CE1 AP4301BM-C AP4301BM-CE1 Tube AP4301BM-CTR AP4301BM-CTRE1 AP4301BM-C AP4301BM-CE1 Tape & Reel 1.24V 0.5% AP4301AM-D AP4301AM-DE1 AP4301AM-D AP4301AM-DE1 Tube AP4301AM-DTR AP4301AM-DTRE1 AP4301AM-D AP4301AM-DE1 Tape & Reel AP4301BM-D AP4301BM-DE1 AP4301BM-D AP4301BM-DE1 Tube AP4301BM-DTR AP4301BM-DTRE1 AP4301BM-D AP4301BM-DE1 Tape/ Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.

Ordering Information

DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Data Sheet Parameter Symbol Value Unit Power Supply V oltage (VCC to GND) V CC 20 V Op Amp 1 and 2 Input V oltage Range (Pins 2, 5, 6) V IN -0.3 to VCC+0.3 V Op Amp 2 Input Differential V oltage (Pins 5, 6) V ID 20 V V oltage Reference Cathode Current (Pin 3) I K 100 mA Power Dissipation PD DIP-8 800 mW SOIC-8 500 Operating Junction Temperature T J 150 oC Storage Temperature Range T STG -65 to 150 oC Lead Temperature (Soldering 10s) T L 260 oC Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only , and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max- imum Ratings" for extended periods may affect device reliability. Parameter Min Max Unit Supply V oltage 3 18 V Ambient Temperature -40 85 oC Recommended Operating Conditions Absolute Maximum Ratings (Note 1)

DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Data Sheet

Electrical Characteristics

Parameter Conditions Min Typ Max Unit Total Supply Current, Excluding Cur- rent in V oltage Reference VCC=5V , no load, -40oC≤TA≤85oC 0.5 0.8 mA VCC=18V , no load, -40oC≤TA≤85oC 0.6 1.2 Voltage Reference Section Refeence V oltage for AP4301-C IK=10mA TA=25oC 0.5% tolerance 1.244 1.250 1.256 V 1% tolerance 1.237 1.263 Reference V oltage for AP4301-D IK=10mA TA=25oC 0.5% tolerance 1.234 1.240 1.246 V 1% tolerance 1.227 1.252 Reference V oltage Deviation over Full Temperature Range IK=10mA, TA=-40 to 85oC 51 7 m V Minimum Cathode Current for Regula- tion 0.2 1 mA Dynamic Impedance I K=1.0 to 80mA, f<1kHz 0.2 0.5 Ω Op Amp 1 Section (VCC=5V , VO=1.4V , TA=25oC, unless otherwise noted) Input Offset V oltage TA=25oC 0.5 3 mV TA=-40 to 85oC 5 Input Offset V oltage Temperature Drift TA=-40 to 85oC 7 µV/oC Input Bias Current (Inverting Input Only) TA=25oC 20 150 nA Large Signal V oltage Gain V CC=15V , RL=2KΩ, VO=1.4 to 11.4V 85 100 dB Power Supply Rejection Ratio V CC=5 to 18V 70 90 dB Output Current Source V CC=15V , VID=1V , VO=2V 20 40 mA Sink V CC=15V , VID=-1V , VO=2V 10 20 mA Output V oltage Swing (High) V CC=18V , RL=10KΩ, VID=1V 16 16.5 V Output V oltage Swing (Low) V CC=18V , RL=10KΩ, VID=-1V 17 100 mV Slew Rate V CC=18V , RL=2kΩ, AV=1, VIN=0.5 to 2V , CL=100pF 0.2 0.5 V/ µ s Gain Bandwidth Product V CC=18V , RL=2kΩ, CL=100pF, VIN=10mV , f=100kHz 0.7 1 MHz Operating Conditions: VCC=+5V , TA=25oC unless otherwise specified.

DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Data Sheet Parameter Conditions Min Typ Max Unit Op Amp2 Section (VCC=5V , VO=1.4V , TA=25oC, unless otherwise noted) Input Offset V oltage TA=25oC 0.5 3 mV TA=-40 to 85oC 5 Input Offset V oltage Temperature Drift TA=-40 to 85oC 7 µV/oC Input Offset Current TA=25oC 23 0 n A Input Bias Current TA=25oC 20 150 nA Input V oltage Range V CC=0 to 18V 0 VCC-1.5 V Common Mode Rejection Ratio TA=25oC, VCM=0 to 3.5V 70 85 dB Large Signal V oltage Gain V CC=15V , RL=2kΩ, VO=1.4 to 11.4V 85 100 dB Power Supply Rejection Ratio V CC=5 to 18V 70 90 d Β Output Current Source V CC=15V , VID=1V , VO=2V 20 40 mA Sink V CC=15V , VID=-1V , VO=2V 10 20 mA Output V oltage Swing (High) V CC=18V , RL=10kΩ, VID=1V 16 16.5 V Output V oltage SWing (Low) V CC=18V , RL=10kΩ, VID=-1V 17 100 mV Slew Rate V CC=18V , RL=2kΩ, AV=1, VIN=0.5 to 2V , CL=100pF 0.2 0.5 V/µ s Gain Bandwidth Product V CC=18V , RL=2kΩ, CL=100pF, VIN=10mV , f=100kHz 0.7 1 MHz Electrical Characteristics (Continued) Operating Conditions: VCC=+5V , TA=25oC unless otherwise specified.

DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Data Sheet Typical Performance Characteristics (Continued) -40 -20 0 20 40 60 80 100 120 Input Bias Current (nA) Ambient Temperature ( o 0 2 4 6 8 10 12 14 16 18 20 100 110 Voltage Gain(dB) Supply Voltage (V) RL=2KΩ RL=20KΩ Figure10. Input Bias Current vs. Ambient Temperature Figure 11. Op Amp Voltage Gain

Figure 12. Application of AP4301 in a Constant Current and Constant Voltage Charger

DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Data Sheet Mechanical Dimensions DIP-8 Unit: mm(inch) R0.750(0.030) 0.254(0.010)TYP 0.130(0.005)MIN 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)TYP 0.700(0.028) 9.000(0.354) 9.400(0.370) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)MIN Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 1.524(0.060) TYP

DUAL OP AMP AND VOLTAGE REFERENCE AP4301 Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Data Sheet Mechanical Dimensions (Continued) Unit: mm(inch) R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 4.800(0.189) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) φ SOIC-8

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com