AP4232BGM-HF

AP4232BGM-HF_14 A-POWER | Alldatasheet

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Technical content

Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Lower Gate Charge BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 22mΩ ▼ Fast Switching Characteristic ID 7.6A ▼ Halogen Free & RoHS Compliant Product

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice AP4232BGM-HF Rating Halogen-Free Product +20 200908031 -55 to 150 Operating Junction Temperature Range 7.6 Parameter Thermal Data Storage Temperature Range -55 to 150 Parameter Drain-Source Voltage Continuous Drain Current3 Total Power Dissipation Continuous Drain Current3 Pulsed Drain Current1 Gate-Source Voltage SO-8 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=7A - - 22 m Ω VGS=4.5V, ID=5A - - 32 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=7A - 15 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=7A - 6 9.6 nC Qgs Gate-Source Charge V DS=15V - 1.3 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 3.4 - nC td(on) Turn-on Delay Time2 VDS=15V - 6 - ns tr Rise Time I D=1A - 7.5 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 16 - ns tf Fall Time R D=15Ω -4- ns Ciss Input Capacitance V GS=0V - 370 600 pF Coss Output Capacitance V DS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Rg Gate Resistance f=1.0MHz - 1.6 3.2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=7A, VGS=0V, - 17.5 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP4232BGM-HF 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =2 5o C 10V 7.0V 6.0V 5.0V V G = 4.0V 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 6.0V 5.0V V G = 4.0 V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =5A T A =25 ℃ 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =7A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP4232BGM-HF Q VG 4.5V QGS QGD QG Charge 02468 1 0 1 2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =15V I D =7A 100 200 300 400 500 600 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135℃/W t T 0.02 Operation in this area limited by RDS(ON) td(on) tr td(off) tf VDS VGS 10% 90%