AP4228M A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼▼▼▼ Low On-Resistance BVDSS 30V ▼▼▼▼ Simple Drive Requirement RDS(ON) 26mΩ ▼▼▼▼ Dual N MOSFET Package ID 6.8A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-amb Thermal Resistance Junction-ambient 3 Max. 62.5 ℃/W Data and specifications subject to change without notice 201016031 AP4228M Parameter Rating Drain-Source Voltage 30 Gate-Source Voltage ± 20 Continuous Drain Current 3 6.8 Continuous Drain Current3 5.5 Pulsed Drain Current1 40 Total Power Dissipation 2 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.016 Thermal Data Parameter Storage Temperature Range The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. S1 G1 S2G2 SO-8

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=6A - - 26 mΩ VGS=4.5V, ID=4A - - 40 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=6A - 15 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=24V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS= ± 20V - - ±100 nA Qg Total Gate Charge2 ID=6.8A - 9 15 nC Qgs Gate-Source Charge V DS=24V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 6 - nC td(on) Turn-on Delay Time2 VDS=15V - 10 - ns tr Rise Time I D=1A - 9 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 18 - ns tf Fall Time R D=15Ω -6- ns Ciss Input Capacitance V GS=0V - 580 930 pF Coss Output Capacitance V DS=25V - 150 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 108 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=6.8A, VGS=0V, - 15 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad. AP4228M

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0123 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 5.0V 4.0V V G =3.0V 0123 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 5.0V 4.0V V G =3.0V 0.6 0.8 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =6A V GS =10V 2468 1 0 1 2 V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =6A T A =25 ℃℃℃℃ 1.5 2.5 -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V) 0.1 0 0.4 0.8 1.2 1.6 V SD , Source-to-Drain Voltage (V) IS(A) Tj=25 o CTj=150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP4228M 100 1000 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss 048 1 2 1 6 2 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =15V V DS =20V V DS =24V td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge I D =6.8A 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms 10s DC