AP4226BGM-HF

AP4226BGM-HF_14 A-POWER | Alldatasheet

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Technical content

Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Lower On-resistance BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 11mΩ ▼ Fast Switching Characteristic ID 10.7A ▼ Halogen Free & RoHS Compliant

Description

ID@TA=25℃ Continuous Drain Current3, VGS @ 10V A ID@TA=70℃ Continuous Drain Current3, VGS @ 10V A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice 10.7 Storage Temperature Range AP4226BGM-HF Rating Halogen-Free Product -55 to 150 Operating Junction Temperature Range Parameter Thermal Data 201202151 -55 to 150 Parameter Drain-Source Voltage Total Power Dissipation Pulsed Drain Current1 Gate-Source Voltage +20 8.5 SO-8 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=10A - 8.1 11 m Ω VGS=4.5V, ID=6A - 13 18 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 1.35 3 V gfs Forward Transconductance V DS=10V, ID=10A - 22 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=10A - 14 22 nC Qgs Gate-Source Charge V DS=15V - 3.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 7.5 - nC td(on) Turn-on Delay Time V DS=15V - 10 - ns tr Rise Time I D=1A - 6 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 8- ns tf Fall Time V GS=10V - 8 - ns Ciss Input Capacitance V GS=0V - 1080 1720 pF Coss Output Capacitance V DS=15V - 195 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 170 - pF Rg Gate Resistance f=1.0MHz - 2.2 4.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=10A, VGS=0V, - 22 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP4226BGM-HF 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =2 5o C 10V 7.0V 6.0V 5.0V V G = 4.0V 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 6.0V 5.0V V G = 4.0 V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =6A T A =25 ℃ 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =1 0A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 01 0 2 0 3 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1 0A V DS =15V 400 800 1200 1600 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135℃/W t T 0.02 Operation in this area limited by RDS(ON) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -40 o C 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A)