AP4224LGM-HF_14 A-POWER | Alldatasheet
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Technical content
Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Low On-Resistance BVDSS 20V ▼ Capable of 2.5V Gate Drive RDS(ON) 14mΩ ▼ Dual N MOSFET Package ID 10A ▼ RoHS Compliant & Halogen-Free
Description
ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice 20110810pre AP4224LGM-HF Rating +12 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current3 8 Pulsed Drain Current1 30 Preliminary Thermal Data Parameter Total Power Dissipation 2 -55 to 150 Operating Junction Temperature Range -55 to 150 Storage Temperature Range SO-8 Advanced Power MOSFETs from APEC provide the designe r with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=10A - - 14 m Ω VGS=2.5V, ID=7A - - 23 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.3 - 1.2 V gfs Forward Transconductance V DS=10V, ID=10A - 16 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+12V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=11A - 10 - nC Qgs Gate-Source Charge V DS=15V - 3 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 4.5 - nC td(on) Turn-on Delay Time V DS=15V - 9 - ns tr Rise Time I D=1A - 5 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 1- ns tf Fall Time V GS=10V - 4.5 - ns Ciss Input Capacitance V GS=0V - 1100 - pF Coss Output Capacitance V DS=15V - 140 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 100 - pF Rg Gate Resistance f=1.0MHz - 1.3 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=11A, VGS=0V, - 17 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 8 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP4224LGM-HF