AP4224GM-HF_14 A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Low On-Resistance BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 14mΩ ▼ Dual N MOSFET Package ID 10A ▼ RoHS Compliant & Halogen-Free

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice 200907211 AP4224GM-HF Rating +20 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 0.016 Storage Temperature Range Continuous Drain Current3 8 Pulsed Drain Current1 30 Halogen-Free Product Thermal Data Parameter Total Power Dissipation 2 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor SO-8 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=10A - - 14 m Ω VGS=4.5V, ID=7A - - 20 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=10A - 16 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=10A - 23 35 nC Qgs Gate-Source Charge V DS=24V - 6 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 14 - nC td(on) Turn-on Delay Time2 VDS=15V - 12 - ns tr Rise Time I D=1A - 8 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 34 - ns tf Fall Time R D=15Ω -1 6- ns Ciss Input Capacitance V GS=0V - 1910 3070 pF Coss Output Capacitance V DS=25V - 400 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 280 - pF Rg Gate Resistance f=1.0MHz - 0.9 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=10A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 24 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 135 ℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP4224GM-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 150 180 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =2 5o C 10V 7.0V 5.0V 4.5V V G = 3 .0V 100 120 140 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 5.0V 4.5V V G = 3 .0V 3579 1 1 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =7A T A =25 ℃ 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =1 0 A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 T j , Junction Temperature ( o C) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 0 1 02 03 04 05 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =15V V DS =20V V DS =24V I D =10A 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135℃/W t T 0.02