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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 100V ▼ Single Drive Requirement RDS(ON) 35mΩ ▼ Fast Switching Characteristic ID 39A ▼ RoHS Compliant

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.2 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice Halogen-Free Product -55 to 175 AP40T10GH-HF Parameter Rating Drain-Source Voltage 100 Gate-Source Voltage ±20 Continuous Drain Current, VGS @ 10V 39 Continuous Drain Current, VGS @ 10V 27 Pulsed Drain Current1 80 Total Power Dissipation 125 Parameter Storage Temperature Range Operating Junction Temperature Range -55 to 175 Thermal Data G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-252(H) The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. 200805191

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 100 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=15A - - 35 mΩ VGS=6V, ID=10A - - 38 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=15V, ID=15A - 14.5 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=125oC) VDS=80V ,VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge2 ID=40A - 24 40 nC Qgs Gate-Source Charge V DS=50V - 5.4 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 9.6 - nC td(on) Turn-on Delay Time2 VDS=50V - 9 - ns tr Rise Time I D=40A - 64 - ns td(off) Turn-off Delay Time R G=2.5Ω,VGS=10V - 19 - ns tf Fall Time R D=1.25Ω -7 5- ns Ciss Input Capacitance V GS=0V - 1310 2100 pF Coss Output Capacitance V DS=25V - 270 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=30A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=30A, VGS=0V, - 60 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 125 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP40T10GH-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 4 8 12 16 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 175o C 10V 7.0V 6 .0V 5.0 V V G = 4.5 V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =1 0A T C =25 o C 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =15A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =175 o C 0.0 0.6 1.2 1.8 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 100 125 02468 1 0 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 6.0V 5.0V V G =4.5V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP40T10GH-HF Q VG 10V QGS QGD QG Charge 100 1000 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 01 0 2 0 3 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =5 0V I D =4 0A 0.1 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse td(on) tr td(off) tf VDS VGS 10% 90%