AP40T03S A-POWER | Alldatasheet

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N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 25V ▼ Low Gate Charge RDS(ON) 25mΩ ▼ Fast Switching ID 28A

Description

V VGS V ID@TA=25℃ A ID@TA=100℃ A IDM A PD@TA=25℃ W W/℃ TSTG TJ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 4.0 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. ℃/W Data and specifications subject to change without notice 200127031 AP40T03S/P Parameter Rating Drain-Source Voltage Gate-Source Voltage ± 25 Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation 31.25 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.25 Thermal Data Parameter Storage Temperature Range G D S G D S TO-263 G D S TO-220 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03P) are available for low-profile applications. G D S TO-220

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA 0.032 V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=18A mΩ VGS=4.5V, ID=14A mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA V gfs Forward Transconductance VDS=10V, ID=18A S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=25V, VGS=0V uA Drain-Source Leakage Current (Tj=150oC) VDS=20V ,VGS=0V uA IGSS Gate-Source Leakage VGS= ± 25V ±100 nA Qg Total Gate Charge2 ID=18A 8.8 nC Qgs Gate-Source Charge VDS=20V 2.5 nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V 5.8 nC td(on) Turn-on Delay Time2 VDS=15V ns tr Rise Time ID=18A ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V ns tf Fall Time RD=0.83Ω 4.4 ns Ciss Input Capacitance VGS=0V 655 pF Coss Output Capacitance VDS=25V 145 pF Crss Reverse Transfer Capacitance f=1.0MHz pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V A ISM Pulsed Source Current ( Body Diode )1 A VSD Forward On Voltage2 Tj=25℃, IS=28A, VGS=0V 1.3 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP40T03S/P

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 0.0 1.5 3.0 4.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C=150 oC 10V 8.0V 6.0V V GS=4.0V 0.0 1.5 3.0 4.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C=25 oC 10V 8.0V 6.0V V GS=4.0V 0.2 0.8 1.4 -50 100 150 T j , Junction Temperature ( oC) Normalized RDS(ON) I D=18A V GS=10V V GS (V) RDS(ON) (mΩ Ω Ω I D=18A T C=25 ℃

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP40T03S/P 100 1000 0.1 100 V DS (V) ID (A) T C=25 oC Single Pulse 100us 1ms 10ms 100ms DC 100 125 150 T c , Case Temperature ( oC) ID , Drain Current (A) 100 150 T c , Case Temperature ( oC) PD (W) 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.5 1.5 2.5 -50 100 150 T j , Junction Temperature ( oC ) VGS(th) (V) Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D=18A V DS=10V V DS=15V V DS=20V 100 1000 10000 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 0.1 100 0.4 0.8 1.2 1.6 V SD (V) IS(A) Tj=25 oC Tj=150 oC

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 0.8 x RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS I D I G 1~ 3 mA 0.6 x RATED VDS TO THE OSCILLOSCOPE 10 v D G S VDS VGS RG RD