AP40T03GH_08 A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Low Gate Charge RDS(ON) 25mΩ ▼ Fast Switching ID 28A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W Rthj-a 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 200807183 Maximum Thermal Resistance, Junction-ambient (PCB mount)3 AP40T03GH/J RoHS-compliant Product Parameter Rating Drain-Source Voltage 30 Gate-Source Voltage + 25 Continuous Drain Current, VGS @ 10V 28 Continuous Drain Current, VGS @ 10V 24 Pulsed Drain Current1 95 Total Power Dissipation 31.25 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.25 Thermal Data Parameter Storage Temperature Range G D S TO-252(H) G D S TO-251(J) G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03GJ) are available for low-profile applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.032 -V / ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=18A - - 25 m Ω VGS=4.5V, ID=14A - - 45 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=18A - 15 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150oC) VDS=24V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS= +25V - - + 100 nA Qg Total Gate Charge2 ID=18A - 8.8 - nC Qgs Gate-Source Charge V DS=20V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 5.8 - nC td(on) Turn-on Delay Time2 VDS=15V - 6 - ns tr Rise Time I D=18A - 62 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 16 - ns tf Fall Time R D=0.83Ω - 4.4 - ns Ciss Input Capacitance V GS=0V - 655 - pF Coss Output Capacitance V DS=25V - 145 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 28 A ISM Pulsed Source Current ( Body Diode )1 -- 9 5 A VSD Forward On Voltage2 Tj=25℃, IS=28A, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board AP40T03GH/J

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP40T03GH/J V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 8 .0V 6 .0V V G =4.0V V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 8 .0V 6 .0V V G =4 .0 V 0.2 0.8 1.4 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =18A V G =10V 0 5 10 15 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =14A T C =25 ℃ 0.1 100 0 0.4 0.8 1.2 1.6 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP40T03GH/J 100 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0369 1 2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =18A V DS =10V V DS =15V V DS =20V 100 1000 1 8 15 22 29 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge

Package Outline : TO-252 Millimeters MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 F 2.20 2.63 3.05 F1 0.5 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-252 SYMBOLS ADVANCED POWER ELECTRONICS CORP. ee D FB1 F1 A3 C R : 0.127~0.381 (0.1mm Part Number Package Code 40T03GH YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence LOGO meet Rohs requirement

Package Outline : TO-251 MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.50 0.69 0.88 B2 0.60 0.87 1.14 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 5.20 5.35 5.50 E 6.70 7.00 7.30 E1 5.40 5.80 6.20 e ---- 2.30 ---- F 5.88 6.84 7.80 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-251 SYMBOLS ADVANCED POWER ELECTRONICS CORP. Millimeters 40T03GJ YWWSSS Part Number Package Code A c e D E1 E F e Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence LOGO meet Rohs requirement for low voltage MOSFET only