AP40P03GP A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge BVDSS -30V ▼ Simple Drive Requirement RDS(ON) 28mΩ ▼ Fast Switching Characteristic ID -30A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 4 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data and specifications subject to change without notice 200731072-1/4 ±20 -30 0.25 -55 to 150 31.3 -55 to 150 AP40P03GP Rating -30 RoHS-compliant Product Continuous Drain Current, VGS @ 10V -18 Pulsed Drain Current1 -120 Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Linear Derating Factor Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V G D S The TO-220 package is universally preferred for all commercial- industrial through hole applications and suited for low voltage applications. G D S TO-220(P) The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-18A - - 28 mΩ VGS=-4.5V, ID=-10A - - 50 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-18A - 20 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS= ±20V - - ±100 nA Qg Total Gate Charge2 ID=-18A - 14 22 nC Qgs Gate-Source Charge V DS=-24V - 3 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 9 - nC td(on) Turn-on Delay Time2 VDS=-15V - 12 - ns tr Rise Time I D=-18A - 56 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 30 - ns tf Fall Time R D=0.8Ω -5 7- ns Ciss Input Capacitance V GS=0V - 915 1465 pF Coss Output Capacitance V DS=-25V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 195 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-18A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-18A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 21 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. DEVICE OR SYSTEM ARE NOT AUTHORIZED. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -10 A T C =25 ℃ 100 120 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =2 5o C -10V -7.0V -5.0V -4.5V V G = -3.0 V 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =-1 8 A V G =-10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) 100 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =150 o C -10V -7.0V -5.0V -4.5V V G = -3.0 V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP40P03GP td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0 5 10 15 20 25 30 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) V DS =- 24 V I D =-1 8 A 100 1000 10000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 1.0 10.0 100.0 1000.0 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC

Package Outline : TO-220 Millimeters MIN NOM MAX A 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 E 9.70 10.00 10.40 E1 --- --- 11.50 e ---- 2.54 ---- L 12.70 13.60 14.50 L1 2.60 2.80 3.00 L2 1.00 1.40 1.80 L3 2.6 3.10 3.6 L4 14.70 15.50 16 L5 6.30 6.50 6.70 φ 3.50 3.60 3.70 D 8.40 8.90 9.40 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-220 SYMBOLS ADVANCED POWER ELECTRONICS CORP. E b e D A c L Package Code Part Number Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 40P03GP YWWSSS LOGO φ meet Rohs requirement