AP40P03GH A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower On-resistance BVDSS -30V ▼ Simple Drive Requirement RDS(ON) 28mΩ ▼ Fast Switching Characteristic ID -30A ▼ RoHS Compliant

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 4 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V -55 to 150 Linear Derating Factor 31.3 -55 to 150 Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Continuous Drain Current, VGS @ 10V -18 Pulsed Drain Current1 -120 201109063-1/4 AP40P03GH/J Rating -30 ±20 -30 0.25 Pb Free Plating Product G D S G D S TO-252(H) G D S TO-251(J) The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40P03GJ) is available for low-profile applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-18A - - 28 mΩ VGS=-4.5V, ID=-10A - - 50 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-18A - 20 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS= ±20V - - ±100 nA Qg Total Gate Charge2 ID=-18A - 14 22 nC Qgs Gate-Source Charge V DS=-24V - 3 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 9 - nC td(on) Turn-on Delay Time2 VDS=-15V - 12 - ns tr Rise Time I D=-18A - 56 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 30 - ns tf Fall Time R D=0.8Ω -5 7- ns Ciss Input Capacitance V GS=0V - 915 1465 pF Coss Output Capacitance V DS=-25V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 195 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-18A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-18A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 21 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -10 A T C =25 ℃ 100 120 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =2 5o C -10V -7.0V -5.0V -4.5V V G = -3.0 V 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =-1 8 A V G =-10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.0 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) 100 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C -10V -7.0V -5.0V -4.5V V G = -3.0 V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP40P03GH/J td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0 5 10 15 20 25 30 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) V DS =- 24 V I D =-1 8 A 100 1000 10000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 1.0 10.0 100.0 1000.0 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC