AP40N03GP-HF_14 A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 17mΩ ▼ Fast Switching Characteristic ID 40A ▼ RoHS Compliant & Halogen-Free

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 2.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data & specifications subject to change without notice 200910094 Thermal Data Parameter Pulsed Drain Current1 169 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.4 Storage Temperature Range Total Power Dissipation 50 -55 to 150 Continuous Drain Current, VGS @ 10V 40 Continuous Drain Current, VGS @ 10V 30 Drain-Source Voltage 30 Gate-Source Voltage + 20 AP40N03GP-HF Parameter Rating Halogen-Free Product Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuits. G D S TO-220 G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=20A - 14 17 m Ω VGS=4.5V, ID=16A - 20 23 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=20A - 26 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=125oC) VDS=24V,VGS=0V - - 250 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=20A - 17 - nC Qgs Gate-Source Charge V DS=24V - 3 - nC Qgd Gate-Drain ("Miller") Charge V GS=5V - 10 - nC td(on) Turn-on Delay Time2 VDS=15V - 7.2 - ns tr Rise Time I D=20A - 60 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 22.5 - ns tf Fall Time R D=0.75Ω -1 0- ns Ciss Input Capacitance V GS=0V - 800 - pF Coss Output Capacitance V DS=25V - 380 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 133 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 40 A ISM Pulsed Source Current ( Body Diode )1 - - 169 A VSD Forward On Voltage2 Tj=25℃, IS=40A, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP40N03GP-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 9.0V 8.0V 7.0V 6.0V 5.0V 4.0V V G =3.0V 120 160 200 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 9.0V 8.0V 7.0V 6.0V 5.0V 4.0V V G =3.0V 0.2 0.8 1.4 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =18A V G =10V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =18A T C =25 ℃ 100 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 4 8 12 16 20 24 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =18A V DS =16V V DS =20V V DS =24V 400 800 1200 1600 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG QGS QGD QG Charge Operation in this area limited by RDS(ON)