AP40G120W_14 A-POWER | Alldatasheet

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▼ Advanced IGBT Technology IC ▼ Low Saturation Voltage VCE(sat)=3.15V@IC=40A ▼ Industry Standard TO-3P Package Absolute Maximum Ratings , 1/8" from case for 10 seconds . Notes: 1.Pulse width limited by max. junction temperature . Thermal Data Symbol Rthj-c Rthj-a Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Min. Typ. Max. Units IGES -- + 100 nA ICES - - 500 uA VCE(sat) - 3.15 3.4 V - 3.2 3.71 V V GE(th) 3-7 V Qg - 160 260 nC Qge -2 5- nC Qgc -9 0- nC td(on) -3 5- ns tr -3 0- ns td(off) - 150 - ns tf - 260 520 ns Eon - 1.7 - mJ Eoff -3- mJ Cies - 3030 4800 pF Coes - 205 - pF Cres -1 5- pF Data and specifications subject to change without notice RoHS-compliant Product 201104072 VCC=600V, Ic=40A, VGE=15V, RG=5Ω, Inductive Load Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Thermal Resistance Junction-Ambient I CM Operating Junction Temperature Range Gate-Emitter Charge Gate Threshold Voltage Collector-Emitter Saturation Voltage Collector-Emitter Leakage Current V GE=15V, IC=50A TL VCE=1200V, VGE=0V VGE=15V Parameter W VCC=500V Maximum Power Dissipation Test Conditions Storage Temperature Range 208PD@TC=25℃ f=1.0MHz -55 to 150 -55 to 150 VGE=15V, IC=40A VCE=VGE, IC=250uA IC=40A VGE=+20V, VCE=0V VCE=30V VGE=0V Pulsed Collector Current1 VGE IC@TC=100℃ IC@TC=25℃ Continuous Collector Current Gate-Emitter Voltage Continuous Collector Current Input Capacitance A V 160 A +20 A AP40G120W Symbol VCES 1200V 40A Rating Collector-Emitter Voltage Units V1200 ℃/W ℃/W Thermal Resistance Junction-Case Parameter Value 0.6 Units Reverse Transfer Capacitance TSTG Gate-Collector Charge Total Gate Charge Parameter Gate-to-Emitter Leakage Current Turn-on Delay Time Output Capacitance TJ Maximum Lead Temp. for Soldering Purposes 300 ℃ G C E G C E TO-3P C

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Saturation Voltage Fig 4. Typical Collector- Emitter Voltage Characteristics v.s. Junction Temperature Fig 5. Gate Threshold Voltage Fig 6. Typical Capacitance Characterisitics v.s. Junction Temperature AP40G120W 120 160 0369 1 2 V CE , Collector-Emitter Voltage (V) IC , Collector Current (A) 20V 18V 15V 12V V GE =10V 0 40 80 120 160 Junction Temperature ( o C) VCE(sat) ,Saturation Voltage(V) I C =8 0A I C =40A V GE =1 5V 0.5 0.8 1.1 1.4 -50 0 50 100 150 Junction Temperature ( o C ) Normalized VGE(th) (V) T C =150 o C 100 120 140 160 02468 V CE , Collector-Emitter Voltage (V) IC , Collector Current(A) V GE =15V T C =25 ℃ 100 10000 1 10 100 V CE , Collector-Emitter Voltage (V) Capacitance (pF) f=1.0MHz C ies C oes C res T C =150 ℃ 100 150 200 250 300 0369 1 2 V CE , Collector-Emitter Voltage (V) IC , Collector Current (A) 20V 18V 15V 12V V GE =10V T C =25 o C

Fig 7. Rever Bias SOA Fig 8. Effective Transient Thermal Impedance Fig 9. Saturation Voltage vs. VGE Fig 10. Saturation Voltage vs. VGE Fig11. Power Dissipation vs. Junction Fig 12. Gate Charge Characterisitics Temperature AP40G120W 0 40 80 120 160 Q G , Gate Charge (nC) VGE , Gate -Emitter Voltage (V) I C =40 A V CC =300V V CC =400V V CC =500V 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) I C =8 0A 40 A 20 A T C =25 o C 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) I C =80A 4 0 A 20 A T C =150 o C 100 1000 10 100 1000 10000 V CE , Collector-Emitter Voltage(V) IC, Peak Collector Current(A)V GE =15V T j =150 o C 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 150 200 250 0 50 100 150 200 Junction Temperature ( ℃ ) Power Dissipation (W)