AP4085I

AP4085I A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS 500V ▼ Simple Drive Requirement RDS(ON) 0.43Ω ▼ Fast Switching Characteristic ID 16A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data and specifications subject to change without notice 201022073-1/4 AP4085I RoHS-compliant Product Parameter Rating Drain-Source Voltage 500 Gate-Source Voltage ±30 Continuous Drain Current, VGS @ 10V 16 Continuous Drain Current, VGS @ 10V 11 Pulsed Drain Current1 60 Total Power Dissipation 40 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.31 159 Thermal Data Parameter Storage Temperature Range G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial- industrial through hole applications. G D S TO-220CFM(I)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 500 - - V RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=8A - - 0.43 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 3 - 5 V gfs Forward Transconductance V DS=10V, ID=8A - 6.3 - S IDSS Drain-Source Leakage Current VDS=400V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=±30V - - ±100 nA Qg Total Gate Charge3 ID=16A - 48 77 nC Qgs Gate-Source Charge V DS=200V - 9 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 32 - nC td(on) Turn-on Delay Time3 VDD=200V - 48 - ns tr Rise Time I D=8A - 134 - ns td(off) Turn-off Delay Time R G=50Ω,VGS=10V - 195 - ns tf Fall Time R D=25Ω - 121 - ns Ciss Input Capacitance V GS=0V - 1205 1930 pF Coss Output Capacitance V DS=30V - 255 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage3 IS=16A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=16A, VGS=0V - 630 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - uC Notes: 1.Pulse width limited by Max junction temperature. 2.Starting Tj=25oC , VDD=99V , L=1mH , RG=25Ω 3.Pulse test AP4085I THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4085I V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 9.0 V 8.0 V 7.0V V G = 6.0V V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10 V 9.0 V 8.0 V 7.0V V G =6.0 V 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =8A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) (V) 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP4085I 100 1000 0.1 1 10 100 1000 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 1 02 03 04 05 06 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =16A V DS =200V 100 1000 10000 1 5 9 13 17 21 25 29 33 37 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 10V QGS QGD QG Chargetd(on) tr td(off) tf VDS VGS 10% 90%

Package Outline : TO-220CFM Millimeters MIN NOM MAX A 4.50 4.70 4.90 A1 2.30 2.65 3.00 b 0.50 0.70 0.90 b1 0.95 1.20 1.50 c 0.45 0.65 0.80 c2 2.30 2.60 2.90 E 9.70 10.00 10.40 L3 2.91 3.41 3.91 L4 14.70 15.40 16.10 φ ---- 3.20 ---- e ---- 2.54 ---- 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-220CFM SYMBOLS ADVANCED POWER ELECTRONICS CORP. Package Code4085I Part Number LOGO Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence YWWSSS LOGO A c E φ b e A c E φ b e