AP4028EP A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 9mΩ ▼ Fast Switching Characteristic ID 42A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4.8 ℃/W Rthj-a 62 ℃/W Data & specifications subject to change without notice Total Power Dissipation 2 201608291 Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Parameter Maximum Thermal Resistance, Junction-ambient Total Power Dissipation Gate-Source Voltage + 20 Drain Current, VGS @ 10V 42 Drain Current, VGS @ 10V 26.6 Pulsed Drain Current1 100 Parameter Rating Drain-Source Voltage 30 AP4028EP Halogen-Free Product AP4028E series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The TO-220 package is widely preferred for all commercial-industrial through hole applications. The low thermal resistance and lo w package cost contribute to the worldwide popular package. G D S G D S TO-220(P)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=24A - - 9 m Ω VGS=4.5V, ID=16A - - 20 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=24A - 48 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=16A - 14 22 nC Qgs Gate-Source Charge V DS=24V - 3.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 8 - nC td(on) Turn-on Delay Time V DS=15V - 8 - ns tr Rise Time I D=24A - 56 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 0- ns tf Fall Time V GS=10V - 4 - ns Ciss Input Capacitance V GS=0V - 1480 2370 pF Coss Output Capacitance V DS=25V - 135 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Rg Gate Resistance f=1.0MHz - 1.3 2.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=24A, VGS=0V, - 13 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 5 - nC Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP4028EP

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 7 .0V 6.0V 5.0 V V G =4.0V 100 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0 V 6.0V 5.0 V V G = 4.0 V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =24A V G =10V 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =16A T C =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 5 10 15 20 25 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =16A V DS =24V 500 1000 1500 2000 1 5 9 1 31 72 12 52 93 33 7 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -40 o C Operation in this area limited by RDS(ON)

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Fig 15. Typ. Drain-Source on State Resistance 100 0 1 02 03 04 05 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS =10V 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA

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