AP4028EH A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET /g721/g721/g721/g721 Low On-resistance BVDSS 30V /g721/g721/g721/g721 Simple Drive Requirement RDS(ON) 9m/g543 /g721/g721/g721/g721 Fast Switching Characteristic ID 45A /g721/g721/g721/g721 RoHS Compliant & Halogen-Free

Description

/g718 Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TC=25/g599 A ID@TC=100/g599 A IDM A PD@TC=25/g599 W PD@TA=25/g599 W TSTG /g599 TJ /g599 Symbol Value Units Rthj-c Maximum Thermal Resi stance, Junction-case 4.2 /g599/W Rthj-a 62.5 /g599/W Data & specifications subject to change without notice Total Power Dissipation3 2 201407292 Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Parameter Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Total Power Dissipation Gate-Source Voltage + 20 Drain Current, VGS @ 10V, (Chip) 45 Drain Current, VGS @ 10V, (Chip) 28 Pulsed Drain Current1 100 Parameter Rating Drain-Source Voltage 30 AP4028EH 29.7 Halogen-Free Product G D S TO-252(H) AP4028 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited fo r high current application due to the low connection resistance. /g328 /g325 /g340

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=24A - 7.7 9 m /g543 VGS=4.5V, ID=16A - 13 20 m /g543 VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=24A - 48 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=16A - 14 22 nC Qgs Gate-Source Charge V DS=24V - 3.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 8 - nC td(on) Turn-on Delay Time V DS=15V - 8 - ns tr Rise Time I D=24A - 56 - ns td(off) Turn-off Delay Time R G=3.3/g543 -2 0- ns tf Fall Time V GS=10V - 4 - ns Ciss Input Capacitance V GS=0V - 1480 2370 pF Coss Output Capacitance V DS=25V - 135 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Rg Gate Resistance f=1.0MHz - 1.3 2.6 /g543 Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Source Current ( Body Diode ) - - 45 A VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=24A, VGS=0V,- 1 3 - n s Qrr Reverse Recovery Charge dI/dt=100A/ μs- 5 - n C Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board AP4028EH

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 7. 0 V 6.0V 5.0 V V G =4.0V 100 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0 V 6.0V 5.0 V V G =4 . 0V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =24A V G =10V 00 . 4 0 . 8 1 . 2 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m/g543/g543/g543/g543) I D =16A T C =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 5 10 15 20 25 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =16A V DS =24V 500 1000 1500 2000 1 7 13 19 25 31 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -40 o C Operation in this area limited by RDS(ON)

Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Fig 15. Typ. Drain-Source on State Resistance 100 200 300 400 500 0 1 02 03 04 05 0 I D , Drain Current (A) RDS(ON) (m/g543/g543/g543/g543) T j =25 o C V GS =3.0V 4.0V 4.5V 5.0V V GS =10V 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA V GS =3.5V

Date Code (YWWSSS) Y/g28873Last Digit Of The Year WW/g28873Week SSS/g28873Sequence 4028EH YWWSSS