AP4024EH A-POWER | Alldatasheet
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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼▼ ▼▼ Low On-resistance BV DSS 30V ▼▼ ▼▼ Simple Drive Requirement R DS(ON) 6m Ω ▼▼ ▼▼ Fast Switching Characteristic ID 60A ▼▼ ▼▼ RoHS Compliant & Halogen-Free
Description
ID @T C =25 ℃ A ID @T C =100 ℃ A IDM A PD @T C =25 ℃ W PD @T A=25 ℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.4 ℃/W Rthj-a 62.5 ℃/W Data & specifications subject to change without notice Total Power Dissipation 3 2 201407292 Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Parameter Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Total Power Dissipation Gate-Source Voltage +20 Drain Current, V GS @ 10V, (Chip) 60 Drain Current, V GS @ 10V, (Chip) 38 Pulsed Drain Current 1 160 Parameter Rating Drain-Source Voltage 30 AP4024EH 36.7 Halogen-Free Product G D S TO-252(H) AP4024 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G D S
Electrical Characteristics@T j=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage V GS =0V, I D =250uA 30 - - V R DS(ON) Static Drain-Source On-Resistance 2 VGS =10V, I D =30A - 4 6 m Ω VGS =4.5V, I D =20A - 5.5 9 m Ω VGS(th) Gate Threshold Voltage V DS =V GS , I D =250uA 1 - 3 V gfs Forward Transconductance V DS =10V, I D =30A - 120 - S IDSS Drain-Source Leakage Current VDS =24V, V GS =0V - - 10 uA IGSS Gate-Source Leakage V GS =+20V, V DS =0V - - + 30 uA Q g Total Gate Charge I D =20A - 17 27 nC Q gs Gate-Source Charge V DS =24V - 2 - nC Q gd Gate-Drain ("Miller") Charge V GS =4.5V - 11 - nC td(on) Turn-on Delay Time V DS =15V - 8 - ns tr Rise Time I D =30A - 65 - ns td(off) Turn-off Delay Time R G =3.3 Ω - 22 - ns tf Fall Time V GS =10V - 7 - ns C iss Input Capacitance V GS =0V - 1500 2400 pF C oss Output Capacitance V DS =25V - 260 - pF C rss Reverse Transfer Capacitance f=1.0MHz - 180 - pF R g Gate Resistance f=1.0MHz - 1.3 2.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Source Current ( Body Diode ) - - 60 A VSD Forward On Voltage 2 IS=20A, V GS =0V - - 1.2 V trr Reverse Recovery Time I S=30A, V GS =0 V, - 15 - ns Q rr Reverse Recovery Charge dI/dt=100A/µs - 6 - nC Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARG E, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED . APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF T HE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DES CRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER IT S PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FUR THER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in 2 copper pad of FR4 board AP4024EH
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 7 .0V 6.0V 5.0 V V G =4.0V 120 160 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0 V 6.0V 5.0 V V G = 4.0 V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized R DS(ON) ID =30A V G =10V 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) IS(A) T j=25 o CT j=150 o C 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) R DS(ON) (m ΩΩΩΩ) ID =20A T C =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized V GS(th) ID =250uA
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc ) PDM Duty Factor = t/T Peak T j = P DM x R thjc + T C t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 5 10 15 20 25 Q G , Total Gate Charge (nC) V GS , Gate to Source Voltage (V) I D =20A V DS =24V 500 1000 1500 2000 1 7 13 19 25 31 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) 100 0 1 2 3 4 5 6 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j=150 o C T j=25 o C V DS =5V T j= -40 o C Operation in this area limited by R DS(ON)
Fig 13. Normalized BV DSS v.s. Junction Fig 14. Total Power Dissipation Fig 15. Typ. Drain-Source on State Resistance 0 20 40 60 80 ID , Drain Current (A) R DS(ON) (m ΩΩΩΩ) T j=25 o C V GS =3.0 V 4.0V 4.5V 5.0V V GS =10 V 0 50 100 150 T C , Case Temperature( o C) PD , Power Dissipation(W) 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BV DSS ID =1mA V GS =3.5V .
Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence 4024EH YWWSSS