AP4002T

AP4002T A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V ▼ Fast Switching Characteristics RDS(ON) 5Ω ▼ Simple Drive Requirement ID 400mA

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TL=25℃ Continuous Drain Current, VGS @ 10V mA IDM Pulsed Drain Current1 A PD@TL=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 150 ℃/W Rthj-l Maximum Thermal Resistance, Junction-lead 60 ℃/W Data & specifications subject to change without notice -55 to 150 400 Linear Derating Factor Storage Temperature Range Parameter Rating 600 ±30 Parameter 201019072-1/4 AP4002T -55 to 150 RoHS-compliant Product 0.017 G D S TO-92G D S Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is widely used for commercial-industrial applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 600 - - V RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=400mA - - 5 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=400mA - 570 - mS IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=±30V - - ±1 uA Qg Total Gate Charge3 ID=2A - 12 19 nC Qgs Gate-Source Charge V DS=480V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 5.5 - nC td(on) Turn-on Delay Time3 VDD=200V - 10 - ns tr Rise Time I D=1A - 12 - ns td(off) Turn-off Delay Time R G=50Ω,VGS=10V - 52 - ns tf Fall Time R D=200Ω -1 9- ns Ciss Input Capacitance V GS=0V - 375 600 pF Coss Output Capacitance V DS=10V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage3 Tj=25℃, IS=2A, VGS=0V - - 1.5 V trr Reverse Recovery Time3 IS=2A, VGS=0V, - 340 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 2.2 - uC Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting T j=25oC , VDD=50V , L=10mH , RG=25Ω 3.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. AP4002T

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4002T 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =400mA V G =10V 0.5 1.5 048 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G = 4.5 V 0.5 1.5 0 4 8 1 21 62 02 42 8 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 6.0V 5.0V V G = 4.5 V V SD , Source-to-Drain Voltage (V) IS (A) T j = 150 o C T j = 25 o C 0.4 0.6 0.8 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP4002T 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T L =25 o C Single Pulse 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 4 8 12 16 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =2A V DS =480V 100 1000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge Duty factor = t/T Peak Tj = PDM x Rthjl + TL Rthjl=60oC/W

Package Outline : TO-92 Millimeters MIN NOM MAX A 4.32 4.83 5.34 D 4.1 4.8 5.3 E 3.1 3.9 4.7 b ---- 0.38 ----- L 12.7 --- ---- e1 ---- 1.27 ---- 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-92 SYMBOLS ADVANCED POWER ELECTRONICS CORP. E Part Number 4002T YWWSSS L A SEATING PLANE b D Package Code Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence